FGW15N40A Fairchild Semiconductor, FGW15N40A Datasheet - Page 4

• Manufacturer Part Number: FGW15N40A
• Description: Strobe Flash N-channel Logic Level Igbt
• Manufacturer: Fairchild Semiconductor

FGW15N40A Rev. A2
Typical Characteristics
Figure 7. Collector to Emitter On-State Voltage vs
Figure 9. Collector to Emitter On-State Voltage vs
Figure 11. Gate to Emitter Threshold Voltage vs
0.75
0.65
0.55
0.45
0.7
0.6
0.5
0.4
7
6
5
4
3
2
9
8
7
6
5
4
3
2
-40
0.5
0
I
V
-20
CE
CE
Gate to Emitter Voltage
Gate to Emitter Voltage
1
= 1mA
= V
1
V
V
Case Temperature
GE
GE
GE
0
, GATE TO EMITTER VOLTAGE (V)
, GATE TO EMITTER VOLTAGE (V)
T
1.5
C
, CASE TEMPERATURE (°C)
20
2
2
40
3
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
T
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
T
60
2.5
J
J
= -40
= 70
(Continued)
80
o
4
o
C
C
3
100
I
I
I
I
I
I
I
I
CE
CE
CE
CE
CE
CE
CE
CE
5
3.5
120
= 150A
= 120A
= 90A
= 60A
= 150A
= 120A
= 90A
= 60A
140
4
6
4
Figure 8. Collector to Emitter On-State Voltage vs
Figure 10. Collector to Emitter On-State Voltage
Figure 12. Capacitance vs Collector to Emitter
5000
1000
100
10
7
6
5
4
3
2
9
8
7
6
5
4
3
2
4
0.5
0.1
0
FREQUENCY = 1MHz
vs Gate to Emitter Voltage
1
V
Gate to Emitter Voltage
1
CE
V
V
, COLLECTOR TO EMITTER VOLTAGE (V)
1.5
GE
GE
, GATE TO EMITTER VOLTAGE (V)
, GATE TO EMITTER VOLTAGE (V)
2
2
Voltage
1
C
RES
2.5
3
C
OES
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
T
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%
T
J
3
4
J
= 25
= 125
o
3.5
10
C
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o
C
5
C
IES
4
I
I
I
I
I
I
I
I
CE
CE
CE
CE
CE
CE
CE
CE
6
4.5
= 150A
= 120A
= 90A
= 60A
= 150A
= 120A
= 90A
= 60A
100
5
7