FW912 Micron Semiconductor Products, FW912 Datasheet - Page 3

• Manufacturer Part Number: FW912
• Description: Flash Memory Technology
• Manufacturer: Micron Semiconductor Products

PART NUMBERING INFORMATION
eral different combinations of features (see Figure 1).
4 Meg x 16 Async/Page/Burst Flash Memory
MT28F642D18_3.p65 – Rev. 3, Pub. 8/02
Micron’s low-power devices are available with sev-
Micron Technology
Flash Family
28F = Dual-Supply Flash
Density/Organization/Banks
642 = 64Mb (4,096K x 16)
Read Mode Operation
D = Asynchronous/Page/Burst Read
Operating Voltage Range
18 = 1.70V–1.90V
20 = 1.80V–2.20V V
20 = 1.80V–2.25V V
bank a = 1/4; bank b = 3/4
NOTE: 1. For part number combinations not listed in this table, please contact your Micron
PART NUMBER
MT28F642D20FN-705 TET
MT28F642D20FN-705 BET
MT28F642D20FN-804 TET
MT28F642D20FN-804 BET
MT28F642D18FN-705 TET
MT28F642D18FN-705 BET
MT28F642D18FN-804 TET
MT28F642D18FN-804 BET
CC
CC
representative.
Q
Valid Part Number Combinations
MT 28F 642 D20 FN-80 4 B ET
TIME (ns)
ACCESS
Part Number Chart
70
70
80
80
70
70
80
80
Figure 1
Table 2
ASYNC/PAGE/BURST FLASH MEMORY
BOOT BLOCK
STARTING
ADDRESS
3
Bottom
Bottom
Bottom
Bottom
Top
Top
Top
Top
Valid combinations of features and their correspond-
ing part numbers are listed in Table 2.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
FREQUENCY
(MHz)
BURST
54
54
40
40
54
54
40
40
Package Code
FN = 59-ball FBGA (8 x 7 grid)
Boot Block Starting Address
B = Bottom boot
T = Top boot
Burst Mode Frequency
4 = 40 MHz
5 = 54 MHz
Access Time
-70 = 70ns
-80 = 80ns
Operating Temperature Range
ET = Extended (-40ºC to +85ºC)
1
TEMPERATURE
-40
-40
-40
-40
-40
-40
-40
-40
OPERATING
RANGE
o
o
o
o
o
o
o
o
C to +85
C to +85
C to +85
C to +85
C to +85
C to +85
C to +85
C to +85
4 MEG x 16
o
o
o
o
o
o
o
o
C
C
C
C
C
C
C
C
©2002, Micron Technology, Inc.
ADVANCE