FW912 Micron Semiconductor Products, FW912 Datasheet - Page 44

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FW912

Manufacturer Part Number
FW912
Description
Flash Memory Technology
Manufacturer
Micron Semiconductor Products
Datasheet

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READ TIMING PARAMETERS
NOTE: 1. WAIT# is shown active LOW.
4 Meg x 16 Async/Page/Burst Flash Memory
MT28F642D18_3.p65 – Rev. 3, Pub. 8/02
DQ0–DQ15
SYMBOL
t
t
t
t
t
t
t
t
VKS
AKS
CKS
KOH
AKH
CVS
AA
ACE
A0–A21
WAIT#
ADV#
WE#
OE#
CLK
CE#
1
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
OH
OH
O L
OL
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
MIN
3.5
10
10
7
7
9
High-Z
t
AA
t
AKS
t
t
VPH
AADV
-70
t
ADDRESS
t
ACE
t
t
VALID
t
VKS
CVS
CKS
VP
MAX
70
70
t
AKH
4-WORD SYNCHRONOUS BURST OPERATION
High-Z
MIN
13
10
10
7
7
5
-80
t
AOE
MAX
t
ACLK
80
80
UNITS
n s
n s
n s
n s
n s
n s
n s
ASYNC/PAGE/BURST FLASH MEMORY
OUTPUT
44
VALID
SYMBOL
t
t
t
t
t
t
t
VP
VPH
AOE
AADV
AVH
OD
OH
t
KOH
OUTPUT
VALID
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MIN
10
10
OUTPUT
3
0
VALID
-70
MAX
70
25
15
OUTPUT
VALID
4 MEG x 16
MIN
10
10
3
0
-80
©2002, Micron Technology, Inc.
t
t
OD
CBPH
ADVANCE
MAX
t
OH
UNDEFINED
80
25
25
High-Z
UNITS
n s
n s
n s

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