FW912 Micron Semiconductor Products, FW912 Datasheet - Page 37

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FW912

Manufacturer Part Number
FW912
Description
Flash Memory Technology
Manufacturer
Micron Semiconductor Products
Datasheet

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CAPACITANCE
(T
4 Meg x 16 Async/Page/Burst Flash Memory
MT28F642D18_3.p65 – Rev. 3, Pub. 8/02
PARAMETER/CONDITION
Input Capacitance
Output Capacitance
A
AC test inputs are driven at V
at V
= +25ºC; f = 1 MHz)
CC
Q/2. Input rise and fall times (10% to 90%) < 5ns.
V
V
Input
CC
SS
1
CC
V
AC Input/Output Reference Waveform
CC
for a logic 1 and V
/2
I/O
Output Load Circuit
SS
14.5K
14.5K
for a logic 0. Input timing begins at V
Figure 15
Figure 16
ASYNC/PAGE/BURST FLASH MEMORY
Test Points
37
V
V
CC
SS
30pF
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
C
V
OUT
C
CC
Q/2
CC
/2, and output timing ends
Output
TYP
7
9
4 MEG x 16
MAX
12
12
©2002, Micron Technology, Inc.
ADVANCE
UNITS
p F
p F

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