KSP24 Fairchild Semiconductor, KSP24 Datasheet

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KSP24

Manufacturer Part Number

KSP24

Description

NPN Epitaxial Silicon Transistor

Manufacturer

Fairchild Semiconductor

Datasheet

1.KSP24.pdf (5 pages)

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©2001 Fairchild Semiconductor Corporation

VHF Transistor

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

Electrical Characteristics

V

V

I

I

P

T

T

R

BV

BV

BV

I

h

f

C

G

G

EBO

C

CBO

T

Symbol

FE

J

STG

CBO

CEO

C

TH

ob

CE

CE

CBO

CEO

EBO

Symbol

(j-a)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

DC Current Gain

Current Gain Bandwidth Product

Output Capacitance

Conversion Gain (213 to 45MHz)

Conversion Gain (60 to 45MHz)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation (T

Derate Above 25 C

Junction Temperature

Storage Temperature

Thermal Resistance, Junction to Ambient

Parameter

T

a

=25 C unless otherwise noted

T

Parameter

a

=25 C unless otherwise noted

a

=25 C)

KSP24

I

I

I

V

V

V

f=100MHz

V

V

Oscillator Injection=150mV

V

Oscillator Injection=150mV

C

C

E

CB

CE

CE

CB

CC

CC

=10 A, I

=100 A, I

=1mA, I

=15V, I

=10V, I

=10V, I

=10V, I

=20V, I

=20V, I

Test Condition

B

C

=0

E

C

C

E

C

C

E

=0

=0

=0, f=1MHz

=8mA

=8mA,

=8mA

=8mA

=0

1. Base 2. Emitter 3. Collector

1

Min.

400

4.0

40

30

30

19

24

-55~150

Value

100

350

135

357

4.0

2.8

40

30

Typ.

0.25

620

24

29

TO-92

Max.

0.36

50

mW/ C

Units

mW

Rev. A1, June 2001

mA

C/W

V

V

V

C

C

Units

MHz

nA

pF

dB

dB

V

V

V

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