KSP24 Fairchild Semiconductor, KSP24 Datasheet - Page 2

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KSP24

Manufacturer Part Number
KSP24
Description
NPN Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
©2001 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 5. Conversion Gain versus Injection Level
Figure 3. Current Gain Bandwidth Product
1000
10k
100
100
1k
10
40
30
20
10
10
0
1
0.1
1
0
I
C
= 8mA
Figure 1. DC current Gain
I
V
I
DC
C
100
C
[mA], COLLECTOR CURRENT
i
[mV], OSCILLATION INJECTION
1
[mA], COLLECTOR CURRENT
10
200
10
f
f
f
f
sig
osc
sig
osc
300
100
= 60MHz,
V
f = 100MHz
= 213MHz,
= 104MHz
= 275MHz
CE
V
CE
= 10V
= 10V
100
1000
400
Figure 4. Conversion Gain versus Collector Current
Figure 2. Base-Emitter Saturation Voltage
10000
1000
40
30
20
10
50
40
30
20
10
100
0
0
10
Collector-Emitter Saturation Voltage
0
0
0.1
OSCInj = 150mVrms
2
Figure 6. Input Admittance
2
213MHz
60MHz
4
I
C
I
I
[mA], COLLECTOR CURRENT
C
4
C
[mA], COLLECTOR CURRENT
[mA], COLLECTOR CURRENT
1
6
b
6
ie
8
10
8
10
12
V
10
V
BE
CE
(sat)
(sat)
b
14
ie
f
f
f
f
sig
osc
sig
osc
12
100
= 60MHz,
= 213MHz,
= 104MHz
= 275MHz
16
g
ie
I
g
C
14
ie
= 10I
18
Rev. A1, June 2001
B
16
20
1000

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