FM1608-120 Ramtron Corporation, FM1608-120 Datasheet - Page 8

• Manufacturer Part Number: FM1608-120
• Description: 64Kb Bytewide FRAM Memory
• Manufacturer: Ramtron Corporation

Ramtron
Read Cycle AC Parameters TA = -40 C to + 85 C, VDD = 4.5V to 5.5V unless otherwise specified
Write Cycle AC Parameters TA = -40 C to + 85 C, VDD = 4.5V to 5.5V unless otherwise specified
Notes
1
2
Power Cycle Timing TA = -40 C to + 85 C, VDD = 4.5V to 5.5V unless otherwise specified
Capacitance TA = 25 C , f=1.0 MHz, VDD = 5V
28 July 2000
Symbol
tCE
tCA
tRC
tPC
tAS
tAH
tOE
tHZ
tOHZ
Symbol
tCA
tCW
tWC
tPC
tAS
tAH
tWP
tDS
tDH
tWZ
tWX
tHZ
tWS
tWH
tPU
tPD
CI/O
CIN
Symbol
Symbol
This parameter is periodically sampled and not 100% tested.
The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. There is no timing
specification associated with this relationship.
VDD Min to First Access Start
Last Access Complete to VDD Min
Input Output Capacitance
Input Capacitance
Parameter
Chip Enable Access Time ( to data valid)
Chip Enable Active Time
Read Cycle Time
Precharge Time
Address Setup Time
Address Hold Time
Output Enable Access Time
Chip Enable to Output High-Z
Output Enable to Output High-Z
Parameter
Chip Enable Active Time
Chip Enable to Write High
Write Cycle Time
Precharge Time
Address Setup Time
Address Hold Time
Write Enable Pulse Width
Data Setup
Data Hold
Write Enable Low to Output High Z
Write Enable High to Output Driven
Chip Enable to Output High-Z
Write Setup
Write Hold
Parameter
Parameter
8
6
Max
1
0
Min
pF
pF
Units
Min
120
180
60
0
10
Min
120
120
180
60
0
10
40
40
0
10
0
0
Units
s
s
Notes
Notes
Max
120
10,000
10
15
15
Max
10,000
15
15
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
Notes
1
1
1
2
2
FM1608
8/12