FQB11N40C Fairchild Semiconductor, FQB11N40C Datasheet

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FQB11N40C

Manufacturer Part Number
FQB11N40C
Description
400V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
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Part Number:
FQB11N40C
Manufacturer:
FAIRCHILD
Quantity:
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©2004 Fairchild Semiconductor Corporation
FQB11N40C/FQI11N40C
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
D
FQB Series
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
G
T
C
C
C
D
= 25°C unless otherwise noted
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
I
FQI Series
Features
• 10.5 A, 400V, R
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 85pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
2
-PAK
FQB11N40C / FQI11N40C
Typ
-
-
-
DS(on)
-55 to +150
=
10.5
13.5
1.07
400
360
135
300
6.6
4.5
42
11
30
0.5
G
!
!
Max
0.93
62.5
40
@V
QFET
! "
! "
GS
!
!
!
!
S
D
"
"
"
"
"
"
= 10 V
Rev. A, January 2004
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQB11N40C Summary of contents

Page 1

... C - Derate above 25°C Parameter QFET = 0 DS(on " " ! " ! " " " " " FQB11N40C / FQI11N40C Units 400 V 10 360 13.5 mJ 4.5 V/ns 135 W 1.07 W/°C -55 to +150 °C 300 °C Typ Max Units - 0 ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 5.7 mH 10.5A 10.5A, di/dt 200A Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Parameter Test Conditions 250 A, Referenced to 25°C ...

Page 3

... Drain Current and Gate Voltage 2000 1800 1600 1400 1200 1000 800 600 400 200 Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ Drain-Source Voltage [ 10V 20V GS ※ Note : ℃ ...

Page 4

... J Figure 7. Breakdown Voltage Variation vs Temperature Operation in This Area Limited Figure 9. Maximum Safe Operating Area ©2004 Fairchild Semiconductor Corporation (Continued) ※ Notes : 250 μ 100 150 200 o , Junction Temperature [ C] DS(on ...

Page 5

... 10V 10V 10V 10V ©2004 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2004 Fairchild Semiconductor Corporation Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT ...

Page 7

... Package Dimensions www.datasheet4u.com 1.27 0.10 2.54 TYP ©2004 Fairchild Semiconductor Corporation 2 D -PAK 9.90 0.20 0.80 0.10 2.54 TYP 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Dimensions in Millimeters Rev. A, January 2004 ...

Page 8

... Package Dimensions www.datasheet4u.com 1.27 0.10 2.54 TYP ©2004 Fairchild Semiconductor Corporation (Continued) I -PAK 2 9.90 0.20 1.47 0.10 0.80 0.10 2.54 TYP 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Dimensions in Millimeters Rev. A, January 2004 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet series™ ActiveArray™ FAST www.datasheet4u.com Bottomless™ FASTr™ CoolFET™ FPS™ ...

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