FQB11N40C Fairchild Semiconductor, FQB11N40C Datasheet - Page 3

• Manufacturer Part Number: FQB11N40C
• Description: 400V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

www.datasheet4u.com
©2004 Fairchild Semiconductor Corporation
Typical Characteristics
2000
1800
1600
1400
1200
1000
800
600
400
200
10
10
10
0
10
-1
2.0
1.5
1.0
0.5
1
0
-1
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs
0
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
5
GS
10
0
10
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
D
0
15
, Drain Current [A]
C
C
C
oss
iss
V
rss
GS
= 10V
20
25
C
C
C
iss
oss
rss
10
= C
= C
= C
1
10
V
gs
gd
ds
※ Notes :
GS
30
+ C
※ Note : T
+ C
1
1. 250 μ s Pulse Test
2. T
= 20V
gd
gd
C
(C
= 25 ℃
ds
※ Notes ;
= shorted)
1. V
2. f = 1 MHz
J
35
= 25 ℃
GS
= 0 V
40
10
10
10
10
10
10
-1
12
10
1
0
-1
8
6
4
2
0
2
1
0
0.2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
o
C
Variation with Source Current
0.4
5
150
o
4
C
V
V
and Temperature
Q
GS
150℃
SD
G
0.6
, Gate-Source Voltage [V]
10
, Source-Drain voltage [V]
, Total Gate Charge [nC]
V
25℃
DS
V
= 400V
DS
-55
V
= 250V
DS
6
0.8
o
15
C
= 100V
※ Notes :
1. V
2. 250 μ s Pulse Test
1.0
20
GS
= 0V
※ Notes :
※ Note : I
8
1. V
2. 250 μ s Pulse Test
DS
= 40V
1.2
25
D
= 10.5A
Rev. A, January 2004
10
1.4
30