FQB70N08 Fairchild Semiconductor, FQB70N08 Datasheet - Page 3

• Manufacturer Part Number: FQB70N08
• Description: 80V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
6000
5000
4000
3000
2000
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
10
10
10
0
2
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
70
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
140
0
10
0
V
GS
= 20V
V
GS
= 10V
210
C
C
C
iss
oss
rss
C
C
C
iss
oss
rss
※ Notes :
1. 250μ s Pulse Test
2. T
= C
= C
= C
10
gs
gd
C
※ Note : T
ds
1
= 25℃
+ C
+ C
280
10
gd
※ Notes :
gd
1
(C
1. V
2. f = 1 MHz
ds
J
GS
= shorted)
= 25℃
= 0 V
350
10
10
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
2
1
0
2
1
0
0.2
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
175℃
25℃
Figure 2. Transfer Characteristics
175℃
0.4
10
Variation vs. Source Current
0.6
20
4
25℃
V
V
Q
and Temperature
GS
SD
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
-55℃
0.8
30
V
DS
V
= 64V
DS
1.0
40
6
= 40V
1.2
50
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
1.4
※ Note : I
60
8
DS
GS
= 30V
= 0V
D
1.6
= 70A
70
Rev. A, August 2000
1.8
10
80