FQB70N08 Fairchild Semiconductor, FQB70N08 Datasheet - Page 4

• Manufacturer Part Number: FQB70N08
• Description: 80V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
3
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs. Temperature
J
DS
, Junction Temperature [
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
1 0
1 0
1 0
※ Notes :
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
DC
C
J
10
= 175
= 25
- 5
1
DS(on)
D = 0 . 5
0 .0 2
0 .0 5
0 .0 1
0 .2
0 .1
50
o
C
o
10 ms
C
1 ms
Figure 11. Transient Thermal Response Curve
100
1 0
(Continued)
100 s
o
- 4
C]
s in g le p u ls e
※ Notes :
1. V
2. I
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
10 s
GS
= 250 μ A
150
= 0 V
10
2
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
-100
0
25
※ N o te s :
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
- 1
P
θ J C
J M
-50
DM
50
- T
( t ) = 0 . 9 7 ℃ /W M a x .
C
vs. Case Temperature
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
D M
1
C
75
0
t
, Case Temperature [ ℃ ]
1 0
2
* Z
0
1
θ J C
/t
2
( t )
100
50
1 0
1
100
125
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= 35 A
= 10 V
Rev. A, August 2000
200
175