FQD6N60C Fairchild Semiconductor, FQD6N60C Datasheet
FQD6N60C
Manufacturer Part Number
FQD6N60C
Description
600V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FQD6N60C.pdf
(8 pages)
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Part Number:
FQD6N60CS
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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Part Number:
FQD6N60CTF
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FAIRCHILD
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12 500
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FQD6N60CTM
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FAIRCHILD
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12 500
Part Number:
FQD6N60CTM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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©2005 Fairchild Semiconductor Corporation
FQD6N60C Rev. A
* When mounted on the minimum pad size recommended (PCB Mount)
FQD6N60C
600V N-Channel MOSFET
Features
• 4 A, 600 V, R
• Low gate charge ( typical 16 nC )
• Low Crss ( typical 7 pF)
• Fast switching
• 100 % avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
Symbol
Symbol
J
L
DSS
GSS
AS
AR
D
, T
JC
JA
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
DS(on)
= 2.0
G
@ V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
S
GS
C
Parameter
Parameter
= 25°C)
= 10 V
FQD Series
D-PAK
D
C
C
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
Typ
G
--
--
--
! ! ! !
! ! ! !
FQD6N60C
-55 to +150
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
0.78
600
300
300
2.4
4.0
8.0
4.5
16
80
D
! ! ! !
! ! ! !
! ! ! !
! ! ! !
S
●
●
●
●
● ●
● ●
●
● ●
●
●
● ●
●
●
●
● ●
● ●
4
●
●
30
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Max
1.56
110
50
QFET
www.fairchildsemi.com
Units
Units
W/°C
V/ns
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®
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