FQD6N60C Fairchild Semiconductor, FQD6N60C Datasheet - Page 3

• Manufacturer Part Number: FQD6N60C
• Description: 600V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

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FQD6N60C Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
10
10
Figure 1. On-Region Characteristics
10
10
-1
-2
1
0
10
1000
-1
800
600
400
200
Drain Current and Gate Voltage
Top :
Bottom : 4.5 V
6
5
4
3
2
1
0
0
10
0
-1
10.0 V
15.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
2
V
DS
4
, Drain-Source Voltage [V]
V
10
DS
, Drain-Source Voltage [V]
0
I
D
10
, Drain Current [A]
0
6
C
C
C
oss
rss
iss
V
GS
= 10V
8
C
C
C
iss
oss
rss
V
= C
10
= C
= C
GS
10
※
1
gs
10
gd
= 20V
ds
1. 250µ s Pulse Test
2. T
+ C
Notes :
+ C
1
※
C
gd
gd
※
= 25 ℃
(C
Note : T
1. V
2. f = 1 MHz
Note ;
ds
12
= shorted)
GS
= 0 V
J
= 25 ℃
14
3
10
12
10
10
10
10
10
10
8
6
4
2
0
-1
-1
1
0
0
1
0
0.2
2
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.4
Variation vs. Source Current
150 ℃
25
150
o
0.6
C
4
o
4
C
25 ℃
V
V
Q
and Temperatue
GS
SD
0.8
G
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
V
V
V
DS
1.0
DS
DS
= 480V
= 300V
= 120V
8
6
-55
※
1.2
o
C
Note : I
D
1.4
= 5.5A
※
1. V
2. 250µ s Pulse Test
Notes :
※
1. V
2. 250µ s Pulse Test
DS
Notes :
12
1.6
8
= 40V
GS
= 0V
1.8
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2.0
16
10