MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet
MT29F1G08ABBHC-ET
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MT29F1G08ABBHC-ET Summary of contents
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... LOCK signal: Protects selectable ranges of blocks PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__1.fm - Rev. E 1/08 EN Products and specifications discussed herein are subject to change by Micron without notice. 1Gb: x8, x16 NAND Flash Memory Figure 1: 63-Ball VFBGA x8 • WP# signal: Write-protects the entire device • ...
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... B = Feature set B Valid Part Number Combinations After building the part number from the part numbering chart, verify that the part number is offered and valid by using the Micron Parametric Part Search Web site at www.micron.com/products/parametric. If the device required is not on this list, contact the factory. ...
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... Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 V Power Cycling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 CC Timing Diagrams Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48aTOC.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 3 ©2006 Micron Technology, Inc. All rights reserved. Table of Contents ...
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... PAGE READ CACHE MODE Operation without R/B#, Part PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48aLOF.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 ©2006 Micron Technology, Inc. All rights reserved. List of Figures ...
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... BLOCK ERASE Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 Figure 66: RESET Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 Figure 67: 63-Ball VFBGA Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48aLOF.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 5 ©2006 Micron Technology, Inc. All rights reserved. List of Figures ...
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... AC Characteristics – Normal Operation Table 23: PROGRAM/ERASE Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48aLOT.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory = 1.65–1.95V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 CC Micron Technology, Inc., reserves the right to change products or specifications without notice. 6 List of Tables ©2006 Micron Technology, Inc. All rights reserved. ...
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... RE# WP# LOCK R/B# PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Address Register Status Register Command Register Micron Technology, Inc., reserves the right to change products or specifications without notice. 7 General Description Column Decode Data Register Cache Register ...
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... NAND Flash Memory General Description CE# WE# R/ Vcc Vcc I/O5 I/O7 I/O4 I/O6 Vss NC NC Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved ...
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... NAND Flash Memory General Description CE# WE# R/ I/O5 I/O7 NC I/O12 I/O14 Vcc Vcc I/O6 I/O15 I/O4 I/O13 Vss Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. 10 ...
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... The V ball is the ground connection connect: NC balls are not internally connected. These balls can be driven or left unconnected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 10 1Gb: x8, x16 NAND Flash Memory General Description during power-up, or leave it SS ©2006 Micron Technology, Inc. All rights reserved. ...
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... MT29F1G16. See Figures 6 and 7 on pages 14 and 15 for additional memory mapping and addressing details. PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 11 Architecture ©2006 Micron Technology, Inc. All rights reserved. ...
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... I/O5 I/O4 I/O3 CA5 CA4 CA3 LOW LOW CA11 PA5 PA4 PA3 BA13 BA12 BA11 Micron Technology, Inc., reserves the right to change products or specifications without notice. 12 Addressing I bytes) = (2K + 64) bytes x 64 pages = (128K + 4K) bytes x 1,024 blocks = 1,056 Mbits I/O2 I/O1 CA2 CA1 CA10 CA9 ...
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... CA5 CA4 LOW LOW LOW BA6 PA5 PA4 BA14 BA13 BA12 Micron Technology, Inc., reserves the right to change products or specifications without notice. 13 1Gb: x8, x16 NAND Flash Memory Addressing I page = (1K + 32) words 1 block = (1K + 32) words x 64 pages = (64K + 2K) words 1 device = (1K + 32) words x 64 pages ...
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... Spare area Out of Bounds Addresses in Page 0x00000840–0x00000FFF 0x00010840–0x00010FFF 0x00020840–0x00020FFF 0xFFFE0840–0xFFFE0FFF 0xFFFF0840–0xFFFF0FFF Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Addressing 2,111 ...
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... Spare area Out of Bounds Addresses in Page 0x00000420–0x00000FFF 0x00010420–0x00010FFF 0x00020420–0x00020FFF 0xFFFE0420–0x00020FFF 0xFFFF0420–0xFFFF0FFF Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Addressing 1,055 ...
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... ERASE command, which requires only 2 address cycles (see “BLOCK ERASE Operation” on page 33 for details). PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 Bus Operation ©2006 Micron Technology, Inc. All rights reserved. ...
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... R/B# pin 1Gb: x8, x16 NAND Flash Memory Bus Operation t R and transitions HIGH after the – MAX 1.85V OL = -------------------------- - ΣI ΣI + 3mA + L L Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. ...
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... Rise are calculated at 10 percent and 90 percent points. 0 2,000 4,000 6,000 8,000 10,000 12,000 1.95V (MAX 1Gb: x8, x16 NAND Flash Memory Bus Operation 1.8 CC Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. ...
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... 0V Micron Technology, Inc., reserves the right to change products or specifications without notice. 19 1Gb: x8, x16 NAND Flash Memory Bus Operation 12kΩ Mode Read mode Command input Address input Write mode Command input Address input Data input ...
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... B8h – 85h – 05h E0h 00h 35h 90h – 90h – ECh – 70h – FFh – Micron Technology, Inc., reserves the right to change products or specifications without notice. 20 Command Definitions Valid During Busy Notes ...
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... PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Command Definitions t R 30h Micron Technology, Inc., reserves the right to change products or specifications without notice. 21 Data output (Serial access) Don‘t Care ©2006 Micron Technology, Inc. All rights reserved. ...
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... PAGE READ CACHE MODE START 31h; PAGE READ CACHE MODE START LAST 3Fh Micron NAND Flash devices have a cache register that can be used to increase READ operation speed when accessing sequential pages in a block. A normal PAGE READ (00h-30h) command sequence is issued (see Figure 14 on page 23 for details) ...
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Figure 14: PAGE READ CACHE MODE CLE CE# WE# ALE t R R/B# RE# I/Ox 30h 00h Address (4 cycles) t DCBSYR1 t DCBSYR2 31h Data output Data output 31h (Serial access) (Serial access) t DCBSYR2 Data output 3fh (Serial ...
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... Rev REA t WHR 00h Byte 0 Byte 1 1 Manufacturer ID Device ID Micron Technology, Inc., reserves the right to change products or specifications without notice. 24 1Gb: x8, x16 NAND Flash Memory Command Definitions 1 1 Byte 2 Byte 3 Byte 4 1 ©2006 Micron Technology, Inc. All rights reserved. ...
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... Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. 1 Value Notes 2Ch A1h B1h 00b 00b 00b 0b 1b 80h 01b 01b 01b 0b 1b ...
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... ONFI READ ID Operation CLE WE# ALE RE# 90h I/O0-7 PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 20h 4Fh 4Eh Micron Technology, Inc., reserves the right to change products or specifications without notice. 26 1Gb: x8, x16 NAND Flash Memory Command Definitions 46h 49h ©2006 Micron Technology, Inc. All rights reserved. ...
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... For example, if bytes 8 7:0 are contained in byte 8. PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN I/O0-7 00h Micron Technology, Inc., reserves the right to change products or specifications without notice. 27 1Gb: x8, x16 NAND Flash Memory Command Definitions P1 … P1022 P1023 9 contain a 16-bit parameter, then bits – ...
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... RE# line will result in outputting data, starting from the spec- ified column address. PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Command Definitions Micron Technology, Inc., reserves the right to change products or specifications without notice (transfer from NAND ©2006 Micron Technology, Inc. All rights reserved. ...
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... Write Write protect Write protect protect – – – t CLR t REA Status Micron Technology, Inc., reserves the right to change products or specifications without notice. 29 1Gb: x8, x16 NAND Flash Memory Command Definitions Definition 0 = Successful PROGRAM/ERASE 1 = Error in PROGRAM/ERASE 0 = Successful PROGRAM 1 = Error in PROGRAM ...
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... Address PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev PROG D 10h IN Micron Technology, Inc., reserves the right to change products or specifications without notice. 30 1Gb: x8, x16 NAND Flash Memory Command Definitions t PROG. The READ STATUS 70h Status ©2006 Micron Technology, Inc. All rights reserved. ...
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... Figure 21 on page 32). PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev 85h Address (2 cycles) 10h IN Micron Technology, Inc., reserves the right to change products or specifications without notice. 31 1Gb: x8, x16 NAND Flash Memory Command Definitions t PROG 70h Status ©2006 Micron Technology, Inc. All rights reserved. ...
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... Status Address/ 80h 10h 2 output data input B: With status reads t LPROG, see note 3, Table 23 on page 55. Micron Technology, Inc., reserves the right to change products or specifications without notice. 32 1Gb: x8, x16 NAND Flash Memory Command Definitions t CBSY Address/ 15h 80h 10h data input ...
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... INTERNAL DATA MOVE operation use a robust ECC scheme that can cor- rect two or more bits per sector. PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Command Definitions Micron Technology, Inc., reserves the right to change products or specifications without notice. 33 ©2006 Micron Technology, Inc. All rights reserved. ...
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... Address D0h 34 1Gb: x8, x16 NAND Flash Memory Command Definitions t PROG 70h Status Address 85h Data 10h (2 cycles) t BERS 70h Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. t PROG 70h Status ...
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... In Micron NAND Flash devices, the OTP area leaves the factory in an unwritten state (each OTP bit is “1”). Programming or partial-page programming enables the user to program only “0” bits in the OTP area. The OTP area cannot be erased, even not protected ...
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... bytes serial input 1 x8 device 2,112 bytes x16 device 1,056 words Micron Technology, Inc., reserves the right to change products or specifications without notice. 36 1Gb: x8, x16 NAND Flash Memory Command Definitions t PROG t WB 10h 70h PROGRAM READ STATUS ...
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... Rev. E 1/08 EN Col 01h 00h 10h 00h PROGRAM command OTP address Micron Technology, Inc., reserves the right to change products or specifications without notice. 37 1Gb: x8, x16 NAND Flash Memory Command Definitions t PROG. The READ STATUS (70h) com PROG 70h READ STATUS ...
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... OTP address 38 1Gb: x8, x16 NAND Flash Memory Command Definitions OUT OUT 30h Busy Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. D OUT M Don’t Care ...
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... The other page address bits should be “0” (see Figure 30 on page 41). PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN 1Gb: x8, x16 NAND Flash Memory Command Definitions Micron Technology, Inc., reserves the right to change products or specifications without notice. 39 ©2006 Micron Technology, Inc. All rights reserved. ...
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... NAND Flash Memory 3FCh Upper block boundary 3F8h Lower block boundary 3FCh Upper block boundary 3F8h Lower block boundary Micron Technology, Inc., reserves the right to change products or specifications without notice. 40 Command Definitions Protected area Unprotected area Protected area Unprotected ...
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... LOW LOW BA14 BA13 BA12 BA11 Block Block 23h add 1 add 2 UNLOCK Lower boundary Micron Technology, Inc., reserves the right to change products or specifications without notice. 41 1Gb: x8, x16 NAND Flash Memory Command Definitions I/O3 I/O2 I/O1 LOW LOW Invert Area Bit BA10 BA9 Block Block ...
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... Rev. E 1/08 EN 2Ah LOCK command t LBSY. The PROGRAM or ERASE operation does not 2Ch LOCK-TIGHT command Micron Technology, Inc., reserves the right to change products or specifications without notice. 42 1Gb: x8, x16 NAND Flash Memory Command Definitions ©2006 Micron Technology, Inc. All rights reserved. ...
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... Block is unlocked and device is not locked-tight PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN Address/data input CONFIRM > 100ns I/O[7: Micron Technology, Inc., reserves the right to change products or specifications without notice. 43 1Gb: x8, x16 NAND Flash Memory Command Definitions t LBSY 70h READ STATUS I/O2 (Lock#) I/O1 (LT ...
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... PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev WHRIO 7Ah Add 1 Add 2 BLOCK LOCK Block address READ STATUS Micron Technology, Inc., reserves the right to change products or specifications without notice. 44 1Gb: x8, x16 NAND Flash Memory Command Definitions Status ©2006 Micron Technology, Inc. All rights reserved. ...
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... LOCK command UNLOCK command with invert area bit = 1 UNLOCK command invert area bit = 0 WP# LOW > 100ns Micron Technology, Inc., reserves the right to change products or specifications without notice. 45 1Gb: x8, x16 NAND Flash Memory Command Definitions Power-up with LOCK LOW ...
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... WB t RST FFh RESET command Bit 7 Bit 6 Bit 5 Bit Micron Technology, Inc., reserves the right to change products or specifications without notice. 46 Command Definitions otherwise written Bit 3 Bit 2 Bit 1 Bit ©2006 Micron Technology, Inc. All rights reserved. ...
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... B8h I/O[7:0] I/O6 I/O5 I/ 1Gb: x8, x16 NAND Flash Memory Command Definitions t RPIO t REAIO 2 I/O[7:0] I/O3 I/O2 I/ Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. I/ ...
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... WCIO t 50 WHIO t WHRIO 100 t WPIO 60h D0h t WW 60h D0h Micron Technology, Inc., reserves the right to change products or specifications without notice. 48 1Gb: x8, x16 NAND Flash Memory Command Definitions Max Unit – ns – ns – ns – ns 250 ns – ns – ...
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... PROGRAM Disable WE# I/Ox WP# R/B# PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev 80h 10h t WW 80h 10h Micron Technology, Inc., reserves the right to change products or specifications without notice. 49 1Gb: x8, x16 NAND Flash Memory Command Definitions ©2006 Micron Technology, Inc. All rights reserved. ...
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... Internal circuitry isolates each block from other blocks, so the presence of a bad block does not affect the operation of the rest of the NAND Flash device. The first block (physical block address 00h) for each CE# in Micron NAND Flash devices is guaranteed to be free of defects (up to 1,000 PROGRAM/ERASE cycles) when shipped from the factory ...
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... Supply voltage on any ball relative Storage temperature STG Symbol Min – 1. Micron Technology, Inc., reserves the right to change products or specifications without notice. 51 1Gb: x8, x16 NAND Flash Memory Electrical Characteristics Min Max –0.6 +2.45 SS –0.6 +2.45 –65 +150 5 Typ Max 0 – 70 – ...
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... V Power Cycling CC Micron NAND Flash devices are designed to prevent data corruption during power tran- sitions. V tection during power transitions.) When V be allowed for the Flash device to initialize before any commands are executed (see Figure 43 for the states of signals during V The RESET command must be issued to all CE#s after the NAND Flash device is powered on ...
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... Max Unit 0V. IN Value 0.0V to 1.8V 5ns TTL GATE and C = 30pF L Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Max Unit µA ±10 µA ±10 µ ...
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... RC MIN is 60ns. t WB, even if R/B# is ready. Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Notes 1 Notes 1 µs 1 µ ...
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... CBSY t LBSY t OBSY t LPROG – t 250 PROG t t PROG (last page) + PROG (last - 1 page) - command load time (last page) - Micron Technology, Inc., reserves the right to change products or specifications without notice. 55 Electrical Characteristics Max Unit Notes 8 cycle 700 µ µs 30 µ ...
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... ALH COMMAND t CLS ALS t ALH Address Don‘t Care Undefined Micron Technology, Inc., reserves the right to change products or specifications without notice. 56 Timing Diagrams Don‘t Care ©2006 Micron Technology, Inc. All rights reserved. ...
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... Timing Diagrams t CLH Final IN t CHZ t REA COH t RHZ 1 t RHOH D OUT Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Don‘t Care Don‘t Care ...
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... CLH t CLS CEA t WHR 70h t R 30h Micron Technology, Inc., reserves the right to change products or specifications without notice. 58 Timing Diagrams t CHZ COH t RHZ t RHOH t REA Status output Don‘t Care Data output (Serial access) Don‘ ...
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... Row OUT OUT 30h add Busy Micron Technology, Inc., reserves the right to change products or specifications without notice. 59 1Gb: x8, x16 NAND Flash Memory Timing Diagrams Data output Don‘t Care t CLR t WHR t REA D Col Col OUT ...
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Figure 52: PAGE READ CACHE MODE Operation, Part CLE t CLS t CLH CE WE# ALE RE Col Col Row I/Ox 00h add 1 add 2 add ...
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Figure 53: PAGE READ CACHE MODE Operation, Part CLE t CLS t CLH CE# WE# t CEA ALE REA D D ...
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Figure 54: PAGE READ CACHE MODE Operation without R/B#, Part CLE t CLS t CLH CE WE# ALE RE Col Col Row Row I/Ox 00h add 1 ...
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Figure 55: PAGE READ CACHE MODE Operation without R/B#, Part CLE t CLS t CLH CE# WE# t CEA ALE REA D D OUT I/Ox ...
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... Byte 0 Byte 1 1 Manufacturer ID Device ID Data input CE WE# Micron Technology, Inc., reserves the right to change products or specifications without notice. 64 1Gb: x8, x16 NAND Flash Memory Timing Diagrams 1 1 Byte 2 Byte 3 Byte 4 1 Data input Don‘t Care ©2006 Micron Technology, Inc. All rights reserved. ...
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... ADL PROG 10h N N+1 PROGRAM READ STATUS Serial input command Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Status Don‘t Care 70h Status command Don‘t Care ...
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... WB t PROG Col Row Row 10h add 1 add PROGRAM Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Status 70h command Don‘t Care 70h Status Don‘t Care ...
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Figure 62: PROGRAM PAGE CACHE MODE Operation Ending on 15h CLE CE WE# ALE RE# Col Col Row Row I/Ox 80h add 1 add 2 add 1 add Serial data Serial ...
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... Row address ERASE command ERASE SETUP command RST FFh RESET command Micron Technology, Inc., reserves the right to change products or specifications without notice. 68 1Gb: x8, x16 NAND Flash Memory Timing Diagrams t BERS 70h Status READ STATUS command Busy ©2006 Micron Technology, Inc. All rights reserved. ...
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... Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of This data sheet contains minimum and maximum limits specified over the complete power supply and temperature range for production devices ...
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... Rev 10/06 • Initial release. PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__2.fm - Rev. E 1/08 EN Power Cycling and Figure 43: AC Waveforms During Power Transitions on Micron Technology, Inc., reserves the right to change products or specifications without notice. 70 1Gb: x8, x16 NAND Flash Memory Revision History t t ...