MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 32

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

Figure 21:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
R/B#
R/B#
I/Ox
I/Ox
80h
80h
PROGRAM PAGE CACHE MODE Example
data input
data input
Address/
Address/
Notes: 1. For definition of
15h
15h
t CBSY
2. Check I/O[6:5] for internal ready/busy. Check I/O[1:0] for pass/fail. RE# can remain LOW or
pulse multiple times after a 70h command.
t CBSY
70h
80h
output
Status
data input
Address/
2
80h
A: Without status reads
t
LPROG, see note 3, Table 23 on page 55.
B: With status reads
15h
data input
Address/
t CBSY
32
80h
10h
data input
Address/
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t PROG
70h
1Gb: x8, x16 NAND Flash Memory
15h
output
Status
t CBSY
1
80h
Command Definitions
data input
©2006 Micron Technology, Inc. All rights reserved.
Address/
10h
t LPROG 1