MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 51

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

Electrical Characteristics
Table 15:
Table 16:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
Device
Parameter/Condition
MT29F1GxxABB
MT29F1GxxABB
MT29F1GxxABB
Short circuit output current, I/Os
Operating temperature
V
Supply voltage
CC
supply voltage
Absolute Maximum Ratings by Device
Recommended Operating Conditions
Stresses greater than those listed under Absolute Maximum Ratings by Device (see
Table 15) may cause permanent damage to the device. This is a stress rating only, and
functional operation of the device at these or any other conditions above those indi-
cated in the operational sections of this specification is not guaranteed. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Commercial
Extended
MT29F1GxxABB
V
V
T
STG
IN
CC
Supply voltage on any ball relative to V
Storage temperature
Symbol
V
V
T
T
CC
A
A
SS
51
Symbol
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
1.65
–40
0
0
1Gb: x8, x16 NAND Flash Memory
Electrical Characteristics
Typ
1.8
SS
–
–
0
©2006 Micron Technology, Inc. All rights reserved.
Min
–0.6
–0.6
–65
Max
1.95
85
70
0
+2.45
+2.45
Max
+150
5
Units
o
o
V
V
Unit
C
C
mA
°C
V
V