MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 24
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MT29F1G08ABBHC-ET
Manufacturer Part Number
MT29F1G08ABBHC-ET
Description
NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
Manufacturer
Micron
Datasheet
1.MT29F1G08ABBHC-ET.pdf
(70 pages)
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READ ID 90h
Figure 15:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
WE#
I/Ox
CE#
ALE
RE#
CLE
READ ID Operation
90h
Notes: 1. See Table 8 on page 25 for byte definitions.
The READ ID command is used to read the identifier codes from the MT29F1G08 and
MT29F1G16 devices. The READ ID command reads a 5-byte table that includes the man-
ufacturer ID, device configuration, and part-specific information. Table 8 on page 25
shows a complete listing of configuration details.
Issuing a 90h command to the command register and a 00h command to the address
register puts the device in read ID mode. The device will remain in this mode until
another valid command and address are issued (see Figure 15). If a 90h command is
issued without an address, the device will remain in read ID mode.
Address, 1 cycle
00h
t WHR
t AR
t REA
Manufacturer ID
Byte 0
24
1
Device ID
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Byte 1
1Gb: x8, x16 NAND Flash Memory
1
Byte 2
1
Command Definitions
Byte 3
©2006 Micron Technology, Inc. All rights reserved.
1
Byte 4