MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 29
![no-image](/images/no-image-200.jpg)
MT29F1G08ABBHC-ET
Manufacturer Part Number
MT29F1G08ABBHC-ET
Description
NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
Manufacturer
Micron
Datasheet
1.MT29F1G08ABBHC-ET.pdf
(70 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT29F1G08ABBHC-ET
Manufacturer:
MICRON
Quantity:
1 822
Company:
Part Number:
MT29F1G08ABBHC-ET:B
Manufacturer:
MICRON
Quantity:
748
Table 9:
Figure 18:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
[15:8]
Bit
SR
0
1
2
3
4
5
6
7
WE#
I/Ox
CE#
RE#
CLE
Ready/busy
Ready/busy
Program
Pass/fail
protect
Page
Write
–
–
–
–
–
Status Register Bit Definition
Status Register Operation
Program Page
Notes: 1. Status register bit 5 is “0” during the actual programming operation. If cache mode is
Pass/fail (N - 1)
Cache Mode
Write protect
Pass/fail (N)
Ready/busy
Ready/busy
cache
–
–
–
–
2. Status register bit 6 is “1” when the cache is ready to accept new data. R/B# follows bit 6.
3. Status register bit 7 typically mirrors the status of WP#. However, when BLOCK LOCK is
70h
used, this bit will be “1” when all internal operations are complete.
See Figure 19 on page 30, and Figure 25 on page 36.
used, status register bit 7 returns “0” if PROGRAM or ERASE operations are performed on
a locked block. Additionally, when using the OTP PROGRAM DATA command, status regis-
ter bit 7 returns “0” if the page is protected. This bit is not modified until the next PRO-
GRAM or ERASE command is issued.
Ready/busy
Ready/busy
protect
Read
Write
Page
–
–
–
–
–
–
t CLR
Cache Mode
Write protect
Page Read
Ready/busy
Ready/busy
cache
t REA
–
–
–
–
–
–
29
Status
Ready/busy 0 = Busy
Ready/busy 0 = Busy
Pass/fail
protect
Block
Erase
Write
Micron Technology, Inc., reserves the right to change products or specifications without notice.
–
–
–
–
–
1Gb: x8, x16 NAND Flash Memory
Definition
0 = Successful PROGRAM/ERASE
1 = Error in PROGRAM/ERASE
0 = Successful PROGRAM
1 = Error in PROGRAM
0
0
0
1 = Ready
1 = Ready
0 = Protected
1 = Not protected
0
Toggle RE# as required
Status
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
Status
Notes
1
2
3