MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 43

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

Figure 33:
Figure 34:
BLOCK LOCK READ STATUS 7Ah
Table 11:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
Block is locked and device is locked-tight
Block is locked and device is not locked-tight
Block is unlocked and device is locked-tight
Block is unlocked and device is not locked-tight
R/B#
I/Ox
BLOCK LOCK Status Register Definitions
PROGRAM or ERASE
BLOCK LOCK Status Register Bit Definitions
PROGRAM/ERASE Issued to Locked or Locked-Tight Block
LOCKED-TIGHT BLOCKS to LOCKED BLOCKS Operation
Note:
LOCK
The BLOCK LOCK READ STATUS (7Ah) command is used to determine the protection
status of individual blocks. The ADDRESS cycles have the same format as shown in
Table 10 on page 41; the invert area bit should be set LOW. On the falling edge of RE#, the
I/O outputs the block-lock status register which contains the information on the protec-
tion status of the block. Table 11 shows how to interpret the block-lock status register
bits.
The BLOCK LOCK READ STATUS (7Ah) command is disabled if LOCK is LOW at
power-on.
WP#
CE#
The device ensures exit from lock-tight mode if the WP# pulse is greater than 100ns. The
device may exit lock-tight mode if WP# pulse is less than 100ns, however, this is not guar-
anteed.
Locked or locked-tight block
Address/data input
I/O[7:3]
X
X
X
X
43
CONFIRM
> 100ns
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I/O2 (Lock#)
1Gb: x8, x16 NAND Flash Memory
0
0
1
1
t LBSY
I/O1 (LT#)
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
READ STATUS
0
1
0
1
70h
I/O0 (LT)
60h
1
0
1
0