MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 20

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

Command Definitions
Table 7:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
Command
BLOCK ERASE
BLOCK LOCK
BLOCK LOCK READ STATUS
BLOCK LOCK TIGHT
BLOCK UNLOCK
OTP DATA PROGRAM
OTP DATA PROTECT
OTP DATA READ
PAGE READ
PAGE READ CACHE MODE START
PAGE READ CACHE MODE LAST
PROGRAM for INTERNAL DATA MOVE
PROGRAM PAGE
PROGRAM PAGE CACHE MODE
PROGRAMMABLE DRIVE STRENGTH
RANDOM DATA INPUT
RANDOM DATA READ
READ for INTERNAL DATA MOVE
READ ID
READ ID (ONFI)
READ PARAMETER PAGE (ONFI)
READ STATUS
RESET
Command Set
Notes: 1. RANDOM DATA INPUT command is limited to use within a single page.
2. RANDOM DATA READ command is limited to use within a single page.
First Cycle
23h-24h
2Ah
7Ah
A0h
A5h
60h
2Ch
AFh
00h
31h
85h
80h
80h
B8h
85h
05h
00h
90h
90h
ECh
70h
3Fh
FFh
20
Second Cycle
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D0h
10h
10h
30h
30h
10h
10h
15h
E0h
35h
–
–
–
–
–
–
–
–
–
–
–
–
–
1Gb: x8, x16 NAND Flash Memory
Valid During Busy
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
Yes
Yes
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
Notes
1
2