BFG193 Infineon Technologies AG, BFG193 Datasheet
BFG193
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BFG193 Summary of contents
Page 1
... Application Note Thermal Resistance thJA Pin Configuration Symbol V CEO V CES V CBO V EBO tot stg R thJS 1 BFG193 VPS05163 Package SOT223 Value Unit 600 mW 150 °C -65 ... 150 -65 ... 150 K/W 105 Jun-27-2001 ...
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... CB E Emitter-base cutoff current current gain mA 25°C, unless otherwise specified. A Symbol V (BR)CEO I CES I CBO I EBO BFG193 Values Unit min. typ. max 100 µ 100 µA 50 100 200 - Jun-27-2001 ...
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... 900 MHz f = 1.8 GHz (k-(k - 25°C, unless otherwise specified. A Symbol Sopt Sopt L Lopt |S 21e = 1 BFG193 Values min. typ. max 0.6 0 Jun-27-2001 Unit GHz pF dB ...
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... S 120 °C 100 150 Permissible Pulse Load thJS p P totmax totDC 0.005 0.01 0.02 0.05 1 0.1 0.2 0 Jun-27-2001 BFG193 - ...
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... GHz 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 Power Gain 1.8GHz V = Parameter 10V 0. 10V f 10V Jun-27-2001 BFG193 0. 0. ...
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... Power Gain | 10V 0.7V -2 2.5 GHz 3 f(f) 21 Parameter I =30mA C 0.5 1.0 1.5 2.0 2.5 Jun-27-2001 BFG193 =f 10V 2V 1V 0.7V GHz 3.5 f ...