BFG193 Infineon Technologies AG, BFG193 Datasheet - Page 5

• Manufacturer Part Number: BFG193
• Description: NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies AG

Collector-base capacitance C
f = 1MHz
Power Gain G
f = 0.9GHz
V
CE
pF
dB
= Parameter
1.3
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
20
16
14
12
10
8
6
4
0
0
10
4
20
ma
, G
30
8
ms
40
= f(I
12
50
C
10V
)
60
cb
16
70 mA
0.7V
= f (V
5V
3V
2V
1V
V
V
I
C
CB
CB
90
22
)
5
Transition frequency f
Power Gain G
f = 1.8GHz
V
V
CE
CE
GHz
dB
= Parameter
9.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
12
= Parameter
8
6
4
2
0
0
0
10
10
20
20
ma
, G
30
30
ms
40
40
= f(I
T
= f (I
50
50
C
)
60
60
10V
10V
C
Jun-27-2001
)
70 mA
70 mA
BFG193
5V
3V
2V
1V
0.7V
5V
3V
2V
1V
0.7V
I
I
C
C
90
90