mpc8568e Freescale Semiconductor, Inc, mpc8568e Datasheet - Page 127

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mpc8568e

Manufacturer Part Number
mpc8568e
Description
Mpc8568e Powerquicc Iii Processor
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Millennium Electronics offer different heat sink-to-ambient thermal resistances, that will allow the
MPC8568E to function in various environments.
24.2.1
For system thermal modeling, the MPC8568E thermal model without a lid is shown in
substrate is modeled as a block 33x33x1.18 mm with an in-plane conductivity of 24 W/mK and a
through-plane conductivity of 0.92 W/mK. The solder balls and air are modeled as a single block
33x33x0.58 mm with an in-plane conductivity of 0.034 W/mK and a through plane conductivity of 12.2
W/mK. The die is modeled as 8.2x12.1 mm with a thickness of 0.75 mm. The bump/underfill layer is
modeled as a collapsed thermal resistance between the die and substrate assuming a conductivity of 5.3
W/m•K in the thickness dimension of 0.07 mm. The die is centered on the substrate. The thermal model
uses approximate dimensions to reduce grid. Please refer to the case outline for actual dimensions.
24.2.2
For the packaging technology, shown in
are as follows:
Freescale Semiconductor
The die junction-to-case thermal resistance
Conductivity
MPC8568E/MPC8567E PowerQUICC III™ Integrated Processor Hardware Specifications, Rev. 0
Silicon
Recommended Thermal Model
Internal Package Conduction Resistance
k
k
k
k
k
k
k
Collapsed Resistance
(8.2 × 12.1 × 0.75 mm)
(8.2 × 12.1 × 0.75mm)
z
x
y
z
x
y
z
(33 × 33 × 0.58 mm)
(33 × 33× 1.18 mm)
Soldera and Air
Bump/Underfill
Substrate
Die
Temperature
dependent
Value
0.034
0.034
0.92
12.2
5.3
24
24
Figure 70. MPC8568E Thermal Model
Table
W/(m × K)
Unit
87, the intrinsic internal conduction thermal resistance paths
Bump/Underfill
y
Top View of Model (Not to Scale)
x
Side View of Model (Not to scale)
Heat Source
Substrate
solder/air
substrate
die
Figure
Z
70. The
Thermal
127

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