fdms7606 Fairchild Semiconductor, fdms7606 Datasheet
fdms7606
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fdms7606 Summary of contents
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... Thermal Resistance, Junction to Case θJC Package Marking and Ordering Information Device Marking Device FDMS7606 FDMS7606 ©2011 Fairchild Semiconductor Corporation FDMS7606 Rev.C ® MOSFET General Description This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally = 11 ...
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... Q Total Gate Charge g(TOT) Q Total Gate Charge g(TOT) Q Gate to Source Charge gs Q Gate to Drain “Miller” Charge gd ©2011 Fairchild Semiconductor Corporation FDMS7606 Rev 25°C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25° ...
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... As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied 4. Q1 based on starting Q2 based on starting ©2011 Fairchild Semiconductor Corporation FDMS7606 Rev 25°C unless otherwise noted J Test Conditions ...
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... 150 1.5 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS7606 Rev 25°C unless otherwise noted 3 μ s 1.5 2 100 125 150 0 - 0.01 0.001 3 ...
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... MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS7606 Rev 25°C unless otherwise noted J 2000 = 10 V 1000 100 ...
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... Typical Characteristics (Q1 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. ©2011 Fairchild Semiconductor Corporation FDMS7606 Rev 25°C unless otherwise noted J SINGLE PULSE 125 C/W θ JA (Note 1c RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...
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... 150 GATE TO SOURCE VOLTAGE (V) GS Figure 18. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS7606 Rev °C unless otherwise noted 3 μ s 1.5 2.0 Figure 15. Normalized on-Resistance vs Drain 50 75 100 125 150 100 o 0 ...
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... MAX RATED 120 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 24. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS7606 Rev 25°C unless otherwise noted J 2000 1000 100 C J ...
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... Typical Characteristics (Q2 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 26. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS7606 Rev °C unless otherwise noted J SINGLE PULSE 120 C/W θ JA (Note 1d RECTANGULAR PULSE DURATION (sec) 9 ...
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... Dimensional Outline and Pad Layout PIN#1 QUADRANT MAX 0.10 C 0.08 C SIDE VI EW 0.05 0.00 1 PIN #1 IDENT 0.66 0.55 0.340 0.56 0. 1. OTTOM VIEW ©2011 Fairchild Semiconductor Corporation FDMS7606 Rev.C 5 0.54 0. (5X) TOP VIEW (0.20 ) SEATING PL ANE 0.54 3.85 0.48 3.75 (5X) 0. 0.97 0. ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS7606 Rev.C Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...