fdms7606 Fairchild Semiconductor, fdms7606 Datasheet - Page 5

• Manufacturer Part Number: fdms7606
• Description: Dual N-channel Powertrench Mosfet Q1 30 V, 12 A, 11.4 M? Q2 30 V, 22 A, 11.6 M?
• Manufacturer: Fairchild Semiconductor

FDMS7606 Rev.C
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
0.01
0.1
10
20
10
60
10
0.001
8
6
4
2
0
1
1
0.01
Figure 7.
0
I
D
Figure 9.
= 11.5 A
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
Figure 11. Forward Bias Safe
J
A
θ
JA
= MAX RATED
= 25
3
= 125
V
0.01
Switching Capability
DS
o
0.1
Gate Charge Characteristics
C
t
, DRAIN to SOURCE VOLTAGE (V)
AV
o
Operating Area
C/W
, TIME IN AVALANCHE (ms)
Unclamped Inductive
Q
DS
g
(
6
, GATE CHARGE (nC)
on
)
T
0.1
J
= 125
1
9
V
DD
V
o
C
= 10 V
DD
T
J
= 20 V
= 25
12
1
10
V
o
DD
C
T
= 15 V
J
= 100
15
100
1s
10s
DC
1 ms
100 ms
10 ms
10
o
μ
100200
C
s
18
40
T
J
5
= 25°C unless otherwise noted
2000
1000
100
500
100
50
40
30
20
10
Figure 10.
0.5
10
10
0
10
1
0.1
25
Figure 12.
-4
Figure 8.
Limited by Package
f = 1 MHz
V
Current vs Case Temperature
R
GS
θ
JC
10
= 0 V
= 4.6
-3
V
50
Maximum Continuous Drain
DS
Power Dissipation
to Source Voltage
V
, DRAIN TO SOURCE VOLTAGE (V)
T
o
GS
Single Pulse Maximum
Capacitance vs Drain
C
10
C/W
t, PULSE WIDTH (sec)
,
= 4.5 V
CASE TEMPERATURE (
-2
75
10
1
-1
V
GS
1
100
= 10 V
SINGLE PULSE
R
10
θ
o
JA
C )
= 125
125
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10
100
C
C
C
oss
rss
iss
o
C/W
1000
150
30