tc59lm836dkg TOSHIBA Semiconductor CORPORATION, tc59lm836dkg Datasheet

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tc59lm836dkg

Manufacturer Part Number
tc59lm836dkg
Description
288mbits Network Fcram2 ? 2,097,152-words ? 4 Banks ? 36-bits
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
TENTATIVE
288Mbits Network FCRAM2
− 2,097,152-WORDS × 4 BANKS × 36-BITS
DESCRIPTION
FCRAM
bits. TC59LM836DKG feature a fully synchronous operation referenced to clock edge whereby all operations are
synchronized at a clock input which enables high performance and simple user interface coexistence.
TC59LM836DKG can operate fast core cycle compared with regular DDR SDRAM.
consumption are required. The Output Driver for Network FCRAM
under light loading condition.
FEATURES
Network FCRAM
TC59LM836DKG is suitable for Network and other applications where large memory density and low power
t
t
t
I
l
l
Fast clock cycle time of 3.33 ns minimum
Quad Independent Banks operation
Fast cycle and Short Latency
Selectable Data Strobe
Distributed Auto-Refresh cycle in 3.9 µs
Self-Refresh
Power Down Mode
Variable Write Length Control
Write Latency = CAS Latency-1
Programable CAS Latency and Burst Length
Organization: 2,097,152 words × 4 banks × 36 bits
Power Supply Voltage
Low voltage CMOS I/O covered with SSTL_18 (Half strength driver) and HSTL.
JTAG boundary scan
Package: 144Ball BGA, 1mm × 0.8mm Ball pitch (P-TFBGA144-1119-0.80BZ)
Lead-Free
Notice: FCRAM is trademark of Fujitsu limited, Japan.
DD2P
DD6
CK
RC
RAC
DD1S
Fully Synchronous Operation
Double Data Rate (DDR)
Data input/output are synchronized with both edges of DS / QS.
Differential Clock (CLK and CLK ) inputs
Output data (DQs and QS) is aligned to the crossings of CLK and CLK .
Clock:
Data:
Burst Length = 2, 4
CS , FN and all address input signals are sampled on the positive edge of CLK.
CAS Latency = 4, 5, 6
TM
Clock Cycle Time (min)
Random Read/Write Cycle Time (min)
Random Access Time (max)
Operating Current (single bank) (max)
Power Down Current (max)
Self-Refresh Current (max)
containing 301,989,888 memory cells. TC59LM836DKG is organized as 2,097,152-words × 4 banks × 36
300 MHz maximum
600 Mbps/pin maximum
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TM
PARAMETER
is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKG is Network
V
V
DD
DDQ
:
: 1.4 V ~ 1.9 V
2.5 V ± 0.125V
CL = 4
CL = 5
CL = 6
360 mA
3.75 ns
3.33 ns
22.5 ns
22.5 ns
95 mA
15 mA
4.5 ns
-33
TC59LM836DKG
TM
is capable of high quality fast data transfer
340 mA
90 mA
15 mA
5.0 ns
4.5 ns
4.0 ns
25 ns
25 ns
TC59LM836DKG-33,-40
-40
2005-11-08 1/65
Lead-Free
Rev 1.4

Related parts for tc59lm836dkg

tc59lm836dkg Summary of contents

Page 1

... TC59LM836DKG can operate fast core cycle compared with regular DDR SDRAM. TC59LM836DKG is suitable for Network and other applications where large memory density and low power consumption are required. The Output Driver for Network FCRAM under light loading condition ...

Page 2

... Clock Input LDS, UDS Write Data Strobe LQS, UQS Read Data Strobe V Power (+2 Ground SS Power (+1. DDQ (for DQ buffer) Ground V SSQ (for DQ buffer) V Reference Voltage REF NC Not Connected TMS, TDI, TCK, TDO Boundary Scan Test Access Ports NAME TC59LM836DKG-33,-40 Rev 1.4 2005-11-08 2/65 ...

Page 3

... Q SS CLK V SS A11 TC59LM836DKG-33,- 0.8mm DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 ...

Page 4

... UPPER ADDRESS BA0, BA1 LATCH LOWER ADDRESS LATCH REFRESH COUNTER BURST COUNTER Note: The TC59LM836DKG configuration is 4 Bank of 16384 × 128 × cell array with the DQ pins numbered DQ0~DQ35. To each block BANK #0 MEMORY CELL ARRAY COLUMN DECODER WRITE ADDRESS LATCH/ ADDRESS ...

Page 5

... ISO PARAMETER −0.3~V −0.3~V −0.3~V −0.3~V MIN 2.375 1.4 /2 × 95% V DDQ + 0.125 V REF −0.1 −0.1 0.4 + 0.2 V REF −0.1 0.55 /2 − 0.125 V DDQ /2 − 0.125 V DDQ TC59LM836DKG-33,-40 RATING UNIT −0. 0.3 V DDQ + 0 0~85 °C −55~150 °C 260 °C 2.5 W ± 0~85°C) (Notes: 1)(T CASE TYP ...

Page 6

... V with a pulse width ≤ 5 ns. DDQ = −0.7 V with a pulse width ≤ the transmitting device. DDQ ( CLK )} /2 ICK ICK V (min) ISO ISO = 1 MHz 25°C) DDQ PARAMETER TC59LM836DKG-33,-40 (DC ICK ICK (max) MIN MAX Delta 1.5 3.0 0.25 1.5 3 ...

Page 7

... DDQ = 0mA ; OUT (AC) (min) ≤ V ≤ DDQ interval ; REFC (AC) (min) ≤ V ≤ DDQ REFC /2), DDQ /2) DDQ and TC59LM836DKG-33,-40 MAX UNIT -33 -40 360 340 125 110 800 750 800 750 360 340 , 15 15 2005-11-08 7/65 NOTES ...

Page 8

... 1.420 0.280 – 0.4V OH DDQ = 0. – 0.4V OH DDQ = 1.4V~1.6V Not defined Not defined TC59LM836DKG-33,-40 MIN MAX UNIT NOTES −5 µA 5 −5 µA 5 −5 µA 5 −5.6   5.6 −9.8   9.8 −2.8  2.8 −4  ...

Page 9

...  C 0.8 L 0.45 × t     C 0.8 L −0.4 × t 0.4 ×  0.35  0.35  0.6  0.6 TC59LM836DKG-33,-40 (Notes -40 UNIT NOTES MIN MAX  25 5.0 7.5 4.5 7.5 4.0 7.5  25 0.45 × t  CK 0.45 × t  CK −0.5 0.5  0.3  0.4 −0.6 0.6 −0.6 0.6  min − ...

Page 10

...      I REFC  200 TC59LM836DKG-33,-40 (Notes (continued) -40 UNIT NOTES MIN MAX −0.6   0   0.7 0.1 1 −0.5 × 0.4 3.9 µs  200  5  ...

Page 11

... IL max contains more than one decimal place, the result 3.3 ns, 0.8 × rounded up to 2.7 ns.) /2 ± 0.1 V from steady state. DDQ = minimum ∼ 6.0ns. When t CK (MIN/MAX) = −0.65ns / 0.65ns AC = 1.7 V∼1.9 V. Both t DDQ TC59LM836DKG-33,-40 VALUE UNIT + 0 REF − 0 REF V ...

Page 12

... V (TYP) DDQ PDEX l RSC l PDA DESL RDA MRS DESL RDA MRS op-code op-code EMRS MRS EMRS TC59LM836DKG-33,- RSC REFC l = 200clock cycle(min) LOCK DESL WRA REF DESL WRA REF MRS Auto Refresh cycle 2005-11-08 12/65 l REFC DESL Low Normal Operation ...

Page 13

... 1st 2nd UA TC59LM836DKG-33,- Refer to the Command Truth Table (AC (AC (AC Rev 1.4 2005-11-08 13/65 ...

Page 14

... CAS latency = 4 LQS Low (output) LDQ Hi-Z (output) UQS (output) Low UDQ Hi-Z (output) CAS latency = 5 LQS Low (output) LDQ Hi-Z (output) UQS (output) Low UDQ Hi-Z (output) TC59LM836DKG-33,-40 DESL t t CKQS CKQS QSP CKQS QSP t t QSQA QSQA QSQV QSQ ...

Page 15

... LQS Low (output) LDQ Hi-Z (output) UQS (output) Low UDQ Hi-Z (output) Note: DQ0 to DQ35 are aligned with QS. The correspondence of LQS, UQS to DQ. LQS UQS DESL DQ0~DQ17 DQ18~DQ35 TC59LM836DKG-33,- CKQS CKQS CKQS QSP QSP Low t t QSQA QSQA QSQV ...

Page 16

... DS (Input) CAS latency = 4 LQS (output) LDQ Hi-Z (output) UQS (output) UDQ Hi-Z (output) CAS latency = 5 LQS (output) LDQ Hi-Z (output) UQS (output) UDQ Hi-Z (output) TC59LM836DKG-33,-40 DESL t t CKQS CKQS QSP CKQS QSP t t QSQA QSQA QSQV QSQ ...

Page 17

... CAS latency = 6 LQS (output) LDQ Hi-Z (output) UQS (output) UDQ Hi-Z (output) Note: DQ0 to DQ35 are aligned with QS. The correspondence of LQS, UQS to DQ. LQS UQS DESL DQ0~DQ17 DQ18~DQ35 TC59LM836DKG-33,- CKQS CKQS CKQS QSP QSP t t QSQA QSQA QSQV ...

Page 18

... DQSS t DSPRES t DSP t DSPREH Preamble t DSPRE DQSS DQSS t DSPRES t DSPREH Preamble t DSPRE t DQSS Low DQ0~DQ17 DQ18~DQ35 TC59LM836DKG-33,-40 t DSPSTH t DSS t DSPST Postamble DSS t t DSPSTH DSS DSP DSP DSPST Postamble ...

Page 19

... I Timing REFI PAUSE XXXX CLK CLK Input (control & addresses) Command Note: “I ” means “I XXXX REFI PAUSE XXXX ”, “I ”, “I ”, etc. RC RCD RAS TC59LM836DKG-33,- Command Rev 1.4 2005-11-08 19/65 ...

Page 20

... BA UA × × × FN BA1~BA0 A13 A12 × × VW0 VW1 VW0 VW1 × L × TC59LM836DKG-33,-40 A13~A10 A9~A8 A7 × × × A11 A10 × × × × × × × × A9~A8 ...

Page 21

... CURRENT CS FN STATE n − × Standby × × Power Down L L × Power Down from REF command. FPDL TC59LM836DKG-33,- A6~A0 × × × BA1~BA0 A13~ A6~A0 NOTES × × × × × × × × × × ...

Page 22

... H SELFX × ×  L TC59LM836DKG-33,-40 ACTION NOTES NOP Row activate for Read Row activate for Write Power Down Entry Illegal Refer to Power Down State Begin Read Illegal Invalid Begin Write Auto-Refresh Illegal ...

Page 23

... Reserved Reserved *4 *4 BA0 A13~A7 A6~ TC59LM836DKG-33,- A6~ BURST TYPE (BT) 0 Sequential 1 Interleave A1 A0 BURST LENGTH (BL Reserved Reserved × × A4~A3 A2~A1 SS DIC (QS) ...

Page 24

... STANDBY (IDLE) WRA RDA ACTIVE ACTIVE (RESTORE) LAL WRITE READ (BUFFER) TC59LM836DKG-33,-40 POWER DOWN PDEN ( MODE REGISTER MRS LAL Command input Automatic return The second command at Active state must be issued 1 clock after RDA or WRA command input. 2005-11-08 24/65 ...

Page 25

... I RC RDA LAL DESL =1 cycle = 4 cycles I I RCD RAS TC59LM836DKG-33,- cycles I RC RDA LAL DESL =1 cycle = 4 cycles I I RCD RAS ...

Page 26

... DESL RDA LAL = 5 cycles =1 cycle I RCD TC59LM836DKG-33,- cycles I RC DESL RDA LAL = 5 cycles =1 cycle I I RAS RCD ...

Page 27

... DESL RDA LAL = 6 cycles =1 cycle I I RAS RCD TC59LM836DKG-33,- cycles I RC DESL RDA = 6 cycles =1 cycle I I RAS RCD ...

Page 28

... I RC WRA LAL DESL =1 cycle = 4 cycles I I RCD RAS TC59LM836DKG-33,- cycles I RC WRA LAL DESL =1 cycle = 4 cycles I I RCD RAS ...

Page 29

... I RC DESL WRA LAL = 5 cycles =1 cycle I RCD TC59LM836DKG-33,- cycles DESL WRA LAL = 5 cycles =1 cycle I I RAS RCD 2005-11-08 29/65 ...

Page 30

... (input DESL WRA LAL = 6 cycles =1 cycle I I RAS RCD TC59LM836DKG-33,- cycles I RC DESL WRA = 6 cycles I I RAS RCD Rev 1 ...

Page 31

... I RC WRA LAL DESL Read data TC59LM836DKG-33,- cycles I RC RDA LAL DESL ...

Page 32

... QS (output Hi DESL WRA LAL Read data TC59LM836DKG-33,- cycles I RC DESL RDA LAL Write data 2005-11-08 32/65 ...

Page 33

... DESL WRA LAL Read data TC59LM836DKG-33,- cycles I RC DESL RDA Write data Rev 1 ...

Page 34

... LAL RDA LAL Bank Bank "a" "b" (Bank"b" cycles Qa0Qa1 Qb0Qb1 Qa0Qa1Qa2Qa3Qb0Qb1Qb2Qb3 Qa0Qa1 Qb0Qb1 Qa0Qa1Qa2Qa3Qb0Qb1Qb2Qb3 TC59LM836DKG-33,- cycles = 2 cycles I RBD RBD RDA LAL RDA LAL RDA LAL ...

Page 35

... Bank "a" "b" (Bank"b" cycles Qa0Qa1 Qb0Qb1 Qa0Qa1Qa2Qa3Qb0Qb1Qb2Qb3 Qa0Qa1 Qb0Qb1 Qa0Qa1Qa2Qa3Qb0Qb1Qb2Qb3 TC59LM836DKG-33,- cycles cycles cycles RBD RBD LAL RDA LAL RDA LAL RDA LA UA ...

Page 36

... RDA UA LA Bank Bank "a" (Bank"b" cycles Qa0Qa1 Qa0Qa1Qa2Qa3Qb0Qb1Qb2Qb3 Qa0Qa1 Qa0Qa1Qa2Qa3Qb0Qb1Qb2Qb3 TC59LM836DKG-33,- cycles cycles cycles RBD RBD RBD LAL RDA LAL RDA LAL ...

Page 37

... Bank Bank "a" "b" (Bank"b" cycles Da0 Da1 Db0Db1 Da0 Da1Da2Da3Db0Db1Db2Db3 Da0 Da1 Db0Db1 Da0 Da1Da2Da3Db0Db1Db2Db3 TC59LM836DKG-33,- cycles cycles RBD RBD WRA LAL WRA LAL WRA LAL UA LA ...

Page 38

... WRA Bank Bank "a" "b" (Bank"b" cycles Da0Da1 Db0Db1 Da0Da1Da2Da3Db0Db1Db2Db3 Da0Da1 Db0Db1 Da0Da1Da2Da3Db0Db1Db2Db3 TC59LM836DKG-33,- cycles cycles cycles RBD RBD LAL WRA LAL WRA LAL WRA ...

Page 39

... DESL Bank Bank "a" "b" (Bank"b" cycles Da0Da1 Db0Db1 Da0Da1Da2Da3Db0Db1Db2Db3 Da0Da1 Db0Db1 Da0Da1Da2Da3Db0Db1Db2Db3 TC59LM836DKG-33,- cycles cycles cycles RBD RBD LAL WRA LAL WRA LAL WRA ...

Page 40

... Da0 Da1 Qb0 Qb1 Da0 Da1 Qb0 Qb1 Da0 Da1 Da0 Da1 Qb0 Qb1 Da0 Da1 Qb0 Qb1 Da0 Da1 TC59LM836DKG-33,- DESL WRA LAL RDA LAL DESL = 2 cycles ...

Page 41

... Da0 Da1 Da2 Da3 Qb0 Qb1 Da0 Da1 Da2 Da3 Da0 Da1 Da2 Da3 Qb0 Qb1 Qb2 Qb3 Da0 Da1 Da2 Da3 Qb0 Qb1 Da0 Da1 Da2 Da3 TC59LM836DKG-33,- DESL LAL WRA LAL RDA = 3 cycles ...

Page 42

... Bank "a" WRA LAL DESL LA=#1 UA VW=1 VW0 = High VW1 = High Bank "a" Last three data are masked. TC59LM836DKG-33,- DESL D0 #1 (#0) Last one data is masked. WRA LAL DESL LA=#2 UA VW=2 VW0 = Low VW1 = High Bank " ...

Page 43

... When PD is brought to "High", a valid executable command may be applied DESL QPDH Power Down Entry (max.) to maintain the data written into cell. REFI TC59LM836DKG-33,- n-2 n-1 n n+1 DESL = 2 cycle , t l RC(min) REFI(max) Hi-Z Hi-Z Power Down Exit cycles later. PDA 2005-11-08 43/65 n+2 I ...

Page 44

... When PD is brought to "High", a valid executable command may be applied DESL = 2 cycle clock cycles (max.) to maintain the data written into cell. REFI TC59LM836DKG-33,- n-2 n-1 n n+1 I PDA DESL RC(min) REFI(max) cycles later. PDA Rev 1.4 2005-11-08 44/65 n+2 ...

Page 45

... DQ (output) Note: Minimum delay from LAL following RDA to RDA of MRS operation is CL+BL/2 clock cycles DESL RDA MRS Valid (opcode) BA0="0" BA1="0" TC59LM836DKG-33,- cycles I RSC RDA DESL or WRA UA BA Rev 1.4 2005-11-08 45/65 ...

Page 46

... Note: Minimum delay from LAL following WRA to RDA of MRS operation is WL+BL/2 clock cycles DESL RDA MRS Valid (opcode) BA0="0" BA1="0" TC59LM836DKG-33,- cycles I RSC RDA DESL or WRA UA BA Rev 1.4 ...

Page 47

... DLL switch in Extended Mode Register must be set to enable mode for normal operation. DLL lock-on time is needed after initial EMRS operation. See Power Up Sequence DESL RDA MRS Valid (opcode) BA0="1" BA1="0" TC59LM836DKG-33,- cycles I RSC RDA DESL or WRA UA BA period ...

Page 48

... DLL lock-on time is needed after initial EMRS operation. See Power Up Sequence. Minimum delay from LAL following WRA to RDA of EMRS operation is WL+BL/2 clock cycles DESL RDA MRS Valid (opcode) BA0="1" BA1="0" TC59LM836DKG-33,- cycles I RSC RDA DESL or WRA UA BA period ...

Page 49

... RAS RCD must be meet 19 clock cycles. REFC must be satisfied. REFI WRA REF 8 Refresh cycle TC59LM836DKG-33,-40 n − cycles I REFC RDA LAL or DESL or MRS or WRA REF Low Hi cycles I REFC RDA LAL or ...

Page 50

... Read command (RDA + LAL) can be issued after I m − REFC DESL Auto Refresh Self Refresh Entry *2 I PDV I CKD FPDL , TC59LM836DKG perform Auto Refresh PDV FPDL from REF command even though PD is CKD m − − REFC *4 *4 WRA REF DESL ...

Page 51

... QS output is invalid until DLL lock from Self-Refresh exit. m − REFC DESL Auto Refresh Self Refresh Entry *2 I PDV I CKD FPDL , TC59LM836DKG perform Auto Refresh PDV FPDL from REF command even though PD is CKD m − − REFC *4 *4 WRA REF DESL ...

Page 52

... LAL command. The A0 to A13 inputs are also used for setting the data in the Regular or Extended Mode Register set cycle. I/O Organization CS & FN BA0 Bank #0 0 Bank #1 1 Bank #2 0 Bank #3 1 UPPER ADDRESS 36 bits A0~A13 TC59LM836DKG-33,-40 BA1 LOWER ADDRESS A0~A6 2005-11-08 52/ Each Rev 1.4 ...

Page 53

... V DD DDQ V and V are power supply pins for memory core and peripheral circuits and V are power supply pins for the output buffer. DDQ SSQ REFERENCE VOLTAGE: V REF V is reference voltage for all input signals. REF , SSQ TC59LM836DKG-33,-40 Rev 1.4 2005-11-08 53/65 ...

Page 54

... PD goes high. The Power Down exit function is asynchronous operation. PDA . RC . Write Burst Length is controlled by VW0 and VW1 inputs with RC period. The device is in Self-Refresh mode as long as PD held CKD TC59LM836DKG-33,-40 . However, about a REFC = “L”) PD from the FPDL period. In addition, ...

Page 55

... Sequential mode is selected. When the A3 bit is “1”, Interleave mode is selected. Both burst types support burst length of 2 and 4 words. BA0 Mode Register Set 0 Regular MRS 1 Extended MRS × Reserved A1 A0 BURST LENGTH 0 0 Reserved words words 1 1 Reserved × × Reserved A3 BURST TYPE 0 Sequential 1 Interleave TC59LM836DKG-33,-40 Rev 1.4 2005-11-08 55/65 ...

Page 56

... LA1~LA2 ACCESS ADDRESS CAS LATENCY 0 0 Reserved 0 1 Reserved 1 0 Reserved 1 1 Reserved Reserved TC59LM836DKG-33,-40 Data Data Data Data BURST LENGTH 2 words 4 words Rev 1.4 2005-11-08 56/65 ...

Page 57

... These bits are reserved for future operations and must be set to “0” for normal operation. DQ OUTPUT DRIVER IMPEDANCE CONTROL Normal Output Driver 0 1 Strong Output Driver 1 0 Weak Output Driver 1 1 Reserved A5 STROBE SELECT 0 Reserved 1 Reserved 0 Unidirectional DS/QS mode 1 Unidirectional DS/Free running QS mode TC59LM836DKG-33,-40 Rev 1.4 2005-11-08 57/65 ...

Page 58

... Samples the inputs connected to the BSCs. Load the sampled data at I/Os SAMPLE to the parallel output of the BSCs. Does not affect RAM operation. This instruction is reserved for future use. This instruction is reserved for future use. BYPASS Bypasses TDI and TDO using the Bypass register. TC59LM836DKG-33,- DESCRIPTION DESCRIPTION Rev 1 ...

Page 59

... A0 44 A10 45 BA1 46 BA0 47 A13 /CS 50 LQS 51 DQ8 52 DQ7 53 DQ6 54 DQ5 55 DQ4 56 DQ3 57 DQ2 58 DQ1 TC59LM836DKG-33,- TOSHIBA ID number BALL LAYOUT BALL NAME B10 DQ0 B3 DQ17 B2 DQ16 C3 DQ15 C2 DQ14 D3 DQ13 D2 DQ12 E3 ...

Page 60

... TMS = 0 TMS = 1 Capture - DR TMS = 0 TMS = 0 Shift - DR TMS = 1 TMS = 1 Exit1 - DR TMS = 0 Pause - DR TMS = 0 TMS = 1 Exit2 - DR TMS = 0 TMS = 1 Update - DR TMS = 1 TMS = 0 TC59LM836DKG-33,-40 TMS = 1 Select – Scan TMS = 0 Capture - IR TMS = 1 TMS = 0 TMS = 0 Shift - IR TMS = 1 TMS = 1 Exit1 - IR TMS = 0 TMS = 0 Pause - IR TMS = 1 TMS = 0 Exit2 - IR TMS = 1 Update - IR ...

Page 61

... Output Valid Time from TCK Low TLQV t Output Hold Time from TCK Low TLQX t Output Low-Z Time from TCK Low TLQLZ t Output High-Z Time from TCK Low TLQHZ TC59LM836DKG-33,-40 TEST CONDITION MIN Output Deselected − OUT DD − 1. − ...

Page 62

... Output Timing Measurement Reference Level TAP TIMING DIAGRAMS t THTH TCK t MVTH TMS t DVTH TDI Capture Data t TLQLZ TDO CONDITION 1.8V / 0.0V 2ns 0.9V 0. THTL TLTH t THMX t THDX t TLQV t TLQX TC59LM836DKG-33,- Ω TDO = 50 Ω 0. Output Load t TLQHZ Rev 1.4 2005-11-08 62/65 ...

Page 63

... PACKAGE DIMENSIONS P-TFBGA144-1119-0.80BZ Weight: 0.30g (typ.) TC59LM836DKG-33,-40 18.5 0.2 S 0.5 0.05 0.08 0.75 A 0.5 1 Rev 1.4 2005-11-08 63/65 ...

Page 64

... REVISION HISTORY − Rev.1.3 (Mar.7 ’2005) 1 edition relesed as lead free products. st − Rev.1.4 (Nov.8 ’2005) “-30”( 333MHz clock / 666Mbps ) version dropped. TC59LM836DKG-33,-40 Rev 1.4 2005-11-08 64/65 ...

Page 65

... The products described in this document are subject to the foreign exchange and foreign trade laws. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. TC59LM836DKG-33,-40 030619EBA Rev 1.4 2005-11-08 65/65 ...

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