tc59lm836dkg TOSHIBA Semiconductor CORPORATION, tc59lm836dkg Datasheet - Page 53
tc59lm836dkg
Manufacturer Part Number
tc59lm836dkg
Description
288mbits Network Fcram2 ? 2,097,152-words ? 4 Banks ? 36-bits
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TC59LM836DKG.pdf
(65 pages)
- Current page: 53 of 65
- Download datasheet (833Kb)
DATA INPUT/OUTPUT: DQ0~DQ35
data of DQ0 to DQ35 are outputted synchronizing with the both edges of QS output signal.
DATA STROBE: LDS, UDS, LQS, UQS
UQS are for DQ18 to DQ35.
(1) Unidirectional DS / QS mode
(2) Unidirectional DS / Free running QS mode
POWER SUPPLY: V
REFERENCE VOLTAGE: V
The input data of DQ0 to DQ35 are taken in synchronizing with the both edges of DS input signal. The output
Method of data strobe is chosen by Extended mode register. LDS and LQS are for DQ0 to DQ17. UDS and
V
V
V
DD
DDQ
REF
operation. Both edges of QS are used for trigger signal of all DQs at Read operation. During Write,
Auto-Refresh and NOP cycle, QS assert always “Low” level. QS is Hi-Z in Self-Refresh mode.
Both edges of QS are used for trigger signal of all DQs at Read operation. QS assert always toggle signal
except Self-Refresh mode. This strobe type is easy to use for pin to pin connect application.
DS is input signal and QS is output signal. Both edges of DS are used to sample all DQs at Write
DS is input signal and QS is output signal. Both edge of DS are used to sample all DQs at Write operation.
and V
and V
is reference voltage for all input signals.
SS
SSQ
are power supply pins for memory core and peripheral circuits.
are power supply pins for the output buffer.
DD
, V
DDQ
REF
, V
SS
, V
SSQ
TC59LM836DKG-33,-40
2005-11-08 53/65
Rev 1.4
Related parts for tc59lm836dkg
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet: