ssm6l09fu TOSHIBA Semiconductor CORPORATION, ssm6l09fu Datasheet
ssm6l09fu
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ssm6l09fu Summary of contents
Page 1
... Rating Unit − ±20 V GSS −200 −400 I DP (Q1, Q2 common) (Ta = 25°C) Symbol Rating Unit P (Note 1) 300 150 °C ch −55~150 T °C stg 2 × 6) Figure 1. 1 SSM6L09FU V V JEDEC ― JEITA ― V TOSHIBA 2-2J1C V Weight: 6.8 mg (typ.) 2007-11-01 Unit: mm ...
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... C oss = 200 mA 0 off (Q1: Nch MOS FET) ( OUT OUT 2 SSM6L09FU 25.4 mm × 25.4 mm × 1 Pad: 0.32 mm 0.4 mm Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 30 ⎯ ⎯ 1 ⎯ 1.1 1.8 ⎯ ⎯ (Note2) 270 ⎯ (Note2) ...
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... off (Q2: Pch MOS FET) ( OUT OUT DS (ON) requires higher voltage than V GS (on) GS (off) 3 SSM6L09FU = 100 μA for this D and V requires lower th GS (off) < (on) Min Typ. Max ⎯ ⎯ ±1 −30 ⎯ ⎯ ⎯ ...
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... Common Source 500 Ta = 25°C 300 100 100 125 150 10 4 SSM6L09FU R – (ON) D Common Source Ta = 25° 3 200 400 600 800 1000 Drain current I D (mA) R – (ON) GS Common Source 200 100° ...
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... Common Source MHz Ta = 25°C 1000 C iss 100 C oss C rss 10 10 100 1 5 SSM6L09FU I – Common Source 25° −0.2 −0.4 −0.6 −0.8 −1 −1.2 Drain-Source voltage V DS (V) t – I ...
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... Common Source −5 V 500 Ta = 25°C 300 100 −10 100 125 150 6 SSM6L09FU R – (ON) D Common Source Ta = 25° −3.3 V −4 V −10 V −100 −200 −300 −400 −500 Drain current I D (mA) R – (ON) ...
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... Common Source MHz Ta = 25°C 1000 C iss 100 C oss C rss 10 −10 −100 −1 2 × 6) Figure 1 120 140 160 7 SSM6L09FU I – Common Source 25° 0.2 0.4 0.6 0.8 1 1.2 Drain-Source voltage V DS (V) t – Common Source − ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 SSM6L09FU 20070701-EN GENERAL 2007-11-01 ...