ssm6l09fu TOSHIBA Semiconductor CORPORATION, ssm6l09fu Datasheet

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ssm6l09fu

Manufacturer Part Number
ssm6l09fu
Description
Toshiba Field Effect Transistor Silicon N/p Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SSM6L09FU
Manufacturer:
DIODES/美台
Quantity:
20 000
Power Management Switch
High Speed Switching Applications
Q1 Absolute Maximum Ratings
Q2 Absolute Maximum Ratings
Absolute Maximum Ratings
Small package
Low on resistance
Drain-Source voltage
Gate-Source voltage
Drain current
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note:
Note 1: Total rating, mounted on FR4 board
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm
Characteristics
Characteristics
Characteristics
DC
Pulse
DC
Pulse
TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type
Q1: R
Q2: R
on
on
= 0.7 Ω (max) (@V
= 2.7 Ω (max) (@V
SSM6L09FU
(Q1, Q2 common) (Ta = 25°C)
P
D
Symbol
Symbol
Symbol
V
V
(Note 1)
V
V
T
I
I
T
GSS
GSS
I
DP
I
DP
DS
DS
stg
(Ta = 25°C)
D
(Ta = 25°C)
D
ch
GS
GS
−55~150
Rating
Rating
Rating
−200
−400
±20
400
800
−30
±20
300
150
2
30
= 10 V)
= −10 V)
1
× 6) Figure 1.
Unit
Unit
Unit
mW
mA
mA
°C
°C
V
V
V
V
Weight: 6.8 mg (typ.)
JEDEC
JEITA
TOSHIBA
SSM6L09FU
2-2J1C
2007-11-01
Unit: mm

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ssm6l09fu Summary of contents

Page 1

... Rating Unit − ±20 V GSS −200 −400 I DP (Q1, Q2 common) (Ta = 25°C) Symbol Rating Unit P (Note 1) 300 150 °C ch −55~150 T °C stg 2 × 6) Figure 1. 1 SSM6L09FU V V JEDEC ― JEITA ― V TOSHIBA 2-2J1C V Weight: 6.8 mg (typ.) 2007-11-01 Unit: mm ...

Page 2

... C oss = 200 mA 0 off (Q1: Nch MOS FET) ( OUT OUT 2 SSM6L09FU 25.4 mm × 25.4 mm × 1 Pad: 0.32 mm 0.4 mm Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 30 ⎯ ⎯ 1 ⎯ 1.1 1.8 ⎯ ⎯ (Note2) 270 ⎯ (Note2) ...

Page 3

... off (Q2: Pch MOS FET) ( OUT OUT DS (ON) requires higher voltage than V GS (on) GS (off) 3 SSM6L09FU = 100 μA for this D and V requires lower th GS (off) < (on) Min Typ. Max ⎯ ⎯ ±1 −30 ⎯ ⎯ ⎯ ...

Page 4

... Common Source 500 Ta = 25°C 300 100 100 125 150 10 4 SSM6L09FU R – (ON) D Common Source Ta = 25° 3 200 400 600 800 1000 Drain current I D (mA) R – (ON) GS Common Source 200 100° ...

Page 5

... Common Source MHz Ta = 25°C 1000 C iss 100 C oss C rss 10 10 100 1 5 SSM6L09FU I – Common Source 25° −0.2 −0.4 −0.6 −0.8 −1 −1.2 Drain-Source voltage V DS (V) t – I ...

Page 6

... Common Source −5 V 500 Ta = 25°C 300 100 −10 100 125 150 6 SSM6L09FU R – (ON) D Common Source Ta = 25° −3.3 V −4 V −10 V −100 −200 −300 −400 −500 Drain current I D (mA) R – (ON) ...

Page 7

... Common Source MHz Ta = 25°C 1000 C iss 100 C oss C rss 10 −10 −100 −1 2 × 6) Figure 1 120 140 160 7 SSM6L09FU I – Common Source 25° 0.2 0.4 0.6 0.8 1 1.2 Drain-Source voltage V DS (V) t – Common Source − ...

Page 8

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 SSM6L09FU 20070701-EN GENERAL 2007-11-01 ...

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