ssm6l09fu TOSHIBA Semiconductor CORPORATION, ssm6l09fu Datasheet - Page 2

• Manufacturer Part Number: ssm6l09fu
• Description: Toshiba Field Effect Transistor Silicon N/p Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Handling Precaution
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Marking
Q1 Electrical Characteristics
Switching Time Test Circuit
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note2: Pulse test
(a) Test circuit
6
1
K 5
4 V
Characteristics
5
2
0
V
Duty < = 1%
V
(Z
Common Source
Ta = 25°C
DD
IN
out
10 μs
: t
= 5 V
r
= 50 Ω)
, t
f
Turn-on time
Turn-off time
4
3
< 5 ns
IN
Equivalent Circuit
(top view)
(Q1: Nch MOS FET)
(Ta = 25°C)
6
1
V
R
V
R
Q1
Symbol
OUT
(BR) DSS
DD
L
DS (ON)
⎪Y
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
iss
rss
th
fs
⎪
5
2
V
I
V
V
V
I
I
I
V
V
V
D
D
D
D
Q2
GS
DS
DS
DS
DS
DD
GS
(b) V
(c) V
= 1 mA, V
= 200 mA, V
= 200 mA, V
= 200 mA, V
2
= ±16 V, V
= 20 V, V
= 5 V, I
= 5 V, I
= 5 V, V
= 5 V, I
= 0~4 V
4
3
OUT
IN
Test Condition
D
D
D
GS
GS
= 0.1 mA
= 200 mA
GS
= 200 mA,
GS
GS
GS
DS
Figure 1:
= 0
= 0, f = 1 MHz
= 0
= 10 V
= 4 V
= 3.3 V
= 0
V
DS (ON)
V
4 V
0 V
DD
(Note2)
(Note2)
(Note2)
(Note2)
25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 0.32 mm
0.4 mm
t
Min
270
1.1
30
⎯
⎯
10%
on
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
r
10%
90%
Typ.
0.53
0.8
1.0
20
16
72
68
⎯
⎯
⎯
⎯
⎯
7
SSM6L09FU
t
90%
off
2007-11-01
Max
t
2
1.8
0.7
1.2
1.7
±1
⎯
⎯
⎯
f
⎯
⎯
⎯
⎯
1
× 6
Unit
mS
μA
μA
pF
pF
pF
ns
Ω
V
V