ssm6l09fu TOSHIBA Semiconductor CORPORATION, ssm6l09fu Datasheet - Page 5

• Manufacturer Part Number: ssm6l09fu
• Description: Toshiba Field Effect Transistor Silicon N/p Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1 (Nch MOS FET)
500
100
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
10
2
1
0
1
0.1
−25
0
Drain-Source voltage V DS (V)
Ambient temperature Ta (°C)
25
1
50
C – V
V
th
– Ta
DS
75
Common Source
I D = 0.1 mA
V DS = 5 V
10
100
Common Source
V GS = 0 V
f = 1 MHz
Ta = 25°C
125
C oss
C rss
C iss
150
100
5
1000
5000
1000
800
600
400
200
100
10
0
0
1
G
t f
−0.2
t on
Common Source
V GS = 0
Ta = 25°C
t off
Drain-Source voltage V DS (V)
t r
−0.4
Drain current I D (mA)
D
S
10
I
I DR
−0.6
DR
t – I
– V
D
−0.8
DS
100
Common Source
V DD = 5 V
V GS = 0~4 V
Ta = 25°C
−1
SSM6L09FU
−1.2
2007-11-01
1000
−1.4