ssm6l09fu TOSHIBA Semiconductor CORPORATION, ssm6l09fu Datasheet - Page 6

• Manufacturer Part Number: ssm6l09fu
• Description: Toshiba Field Effect Transistor Silicon N/p Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q2 (Pch MOS FET)
−1000
−0.01
−500
−400
−300
−200
−100
−100
−0.1
−10
−1
0
8
7
6
5
4
3
2
1
0
−25
0
0
Common Source
Ta = 25°C
Common Source
V DS = −5 V
Common Source
I D = −100 mA
0
Drain-Source voltage V DS (V)
Gate-Source voltage V GS (V)
Ta = 100°C
Ambient temperature Ta (°C)
−0.5
−1
25
V GS = −3.3 V
25°C
R
DS (ON)
I
I
50
D
D
−10
−10 V
– V
– V
−4 V
−25°C
−1
−2
DS
GS
75
– Ta
100
−1.5
−3
V GS = −2.4 V
−4
125
−3.3
−3.0
−2.8
−2.6
150
−2
−4
6
1000
500
300
100
50
30
10
−10
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
0
0
Common Source
V DS = −5 V
Ta = 25°C
−100
−2
Gate-Source voltage V GS (V)
V GS = −3.3 V
−30
Drain current I D (mA)
Drain current I D (mA)
−50
R
R
−4 V
−200
DS (ON)
−4
DS (ON)
−10 V
⏐Y
−25°C
fs
25°C
−100
Ta = 100°C
⏐ – I
– V
−300
– I
−6
D
GS
D
Common Source
I D = −100 mA
Common Source
Ta = 25°C
−300
−400
SSM6L09FU
−8
−500
2007-11-01
−1000
−500
−10