ssm6l09fu TOSHIBA Semiconductor CORPORATION, ssm6l09fu Datasheet - Page 4

• Manufacturer Part Number: ssm6l09fu
• Description: Toshiba Field Effect Transistor Silicon N/p Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1 (Nch MOS FET)
1000
1000
0.01
800
600
400
200
100
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
10
0
1
2
1
0
−25
0
0
Common Source
V DS = 5 V
Common Source
I D = 200 mA
0
10
Drain-Source voltage V DS (V)
Gate-Source voltage V GS (V)
Ta = 100°C
Ambient temperature Ta (°C)
0.5
1
25
25°C
V GS = 3.3 V
R
4
DS (ON)
I
I
50
D
D
– V
– V
10 V
4 V
1
2
−25°C
DS
GS
75
– Ta
Common Source
Ta = 25°C
100
1.5
3
V GS = 2.4 V
125
3.3
3.0
2.8
2.6
150
2
4
4
1000
500
300
100
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
50
30
10
2
1
0
2
1
0
10
0
0
Common Source
V DS = 5 V
Ta = 25°C
200
Gate-Source voltage V GS (V)
2
V GS = 3.3 V
30
Drain current I D (mA)
Drain current I D (mA)
R
50
R
DS (ON)
4 V
400
DS (ON)
⏐Y
4
−25°C
10 V
fs
25°C
Ta = 100°C
100
⏐ – I
– V
– I
600
D
6
GS
D
Common Source
Ta = 25°C
Common Source
I D = 200 mA
300
SSM6L09FU
800
8
500
2007-11-01
1000
1000
10