ssm6l09fu TOSHIBA Semiconductor CORPORATION, ssm6l09fu Datasheet - Page 3

• Manufacturer Part Number: ssm6l09fu
• Description: Toshiba Field Effect Transistor Silicon N/p Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Precaution
product. For normal switching operation, V
voltage than V
Q2 Electrical Characteristics
Switching Time Test Circuit
Precaution
this product. For normal switching operation, V
lower voltage than V
V
Please take this into consideration for using the device.
V
Please take this into consideration for using the device.
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note2: Pulse test
th
(a) Test circuit
th
can be expressed as voltage between gate and source when low operating current value is I
can be expressed as voltage between gate and source when low operating current value is I
−4 V
th
0
Characteristics
V
Duty < = 1%
V
(Z
Common Source
Ta = 25°C
. (Relationship can be established as follows: V
DD
IN
out
10 μs
: t
= −5 V
th
r
= 50 Ω)
, t
. (Relationship can be established as follows: V
f
Turn-on time
Turn-off time
< 5 ns
IN
(Q2: Pch MOS FET)
(Ta = 25°C)
V
R
V
R
GS (on)
Symbol
OUT
(BR) DSS
DD
L
DS (ON)
⎪Y
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
iss
rss
th
fs
GS (on)
⎪
requires higher voltage than V
V
I
V
V
V
I
I
I
V
V
V
V
V
D
D
D
D
requires higher voltage than V
GS
DS
DS
DS
DS
DS
DS
DD
GS
(b) V
(c) V
= −1 mA, V
= −100 mA, V
= −100 mA, V
= −100 mA, V
3
= ±16 V, V
= −30 V, V
= −5 V, I
= −5 V, I
= −5 V, V
= −5 V, V
= −5 V, V
= −5 V, I
= 0~−4 V
OUT
IN
Test Condition
GS (off)
D
D
D
GS
GS
GS
GS
= −0.1 mA
= −100 mA (Note2)
DS
GS
= −100 mA,
GS
GS
GS
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
GS (off)
= 0
= 0
< V
V
= −10 V (Note2)
= −4 V (Note2)
= −3.3 V(Note2)
DS (ON)
th
−4 V
V
0 V
DD
< V
< V
GS (on)
th
th
< V
and V
th
GS (on)
)
−1.1
t
Min
−30
115
⎯
⎯
10%
on
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
and V
t
r
GS (off)
90%
10%
)
GS (off)
Typ.
2.1
3.3
4.0
22
14
85
85
⎯
⎯
⎯
⎯
⎯
5
SSM6L09FU
D
D
requires lower
= 100 μA for this
= −100 μA for
t
90%
off
2007-11-01
requires
−1.8
Max
t
2.7
4.2
6.0
±1
−1
⎯
⎯
⎯
f
⎯
⎯
⎯
⎯
Unit
mS
μA
μA
pF
pF
pF
ns
Ω
V
V