m24l416256d Elite Semiconductor Memory Technology Inc., m24l416256d Datasheet
m24l416256d
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m24l416256d Summary of contents
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... MHz •Low standby power •Automatic power-down when deselected Functional Description The M24L416256DA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 256K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current ...
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... CE2 A16 A15 A14 A11 A13 A12 M24L416256DA Publication Date: Jul. 2008 Revision: 1.5 2/15 ...
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... Not Use) pins have to be left floating or tied to V Elite Semiconductor Memory Technology Inc. Operating, ICC (mA) Speed (ns MHz Max. Typ.[2] Max ensure proper application. SS M24L416256DA Power Dissipation Standby, ISB2 (µ MAX Typ.[2] Max. Typ.[ Publication Date: Jul. 2008 Revision: 1.5 Max ...
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... 3.6V CC Test Conditions T = 25° MHz CC(typ) Test conditions methods and procedures for measuring thermal impedance, per EIA/JESD51. M24L416256DA Ambient Temperature ( −25°C to +85°C −40°C to +85°C -55, 60, 70 Min. Typ.[2] Max. 2.7 3.0 3.6 – 0 ...
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... M24L416256DA Unit Ω Ω Ω V –60 –70 Max. Min. Max ...
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... 16 HIGH for Read Cycle. Elite Semiconductor Memory Technology Inc. –55 Min. Max. Min M24L416256DA –60 –70 Max. Min. Max Publication Date: Jul. 2008 Revision: 1.5 6/15 Unit ...
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... Chip Enable goes INACTIVE simultaneously with WE =HIGH, the output remains in a high-impedance state. 19.During the DON’T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied. Elite Semiconductor Memory Technology Inc M24L416256DA Publication Date: Jul. 2008 Revision: 1.5 7/15 ...
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... ESMT Switching Waveforms (continued) 1 Write Cycle CE2 Controlled)[12, 13, 17, 18, 19] Write Cycle Controlled, OE LOW)[18, 19] Elite Semiconductor Memory Technology Inc. M24L416256DA Publication Date: Jul. 2008 Revision: 1.5 8/15 ...
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... ESMT Switching Waveforms (continued) Write Cycle No BHE / BLE Controlled, OE LOW)[18, 19] Elite Semiconductor Memory Technology Inc. M24L416256DA Publication Date: Jul. 2008 Revision: 1.5 9/15 ...
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... CE1 WE Address Avoidable Timing 2 CE1 WE Address Elite Semiconductor Memory Technology Inc high (≧t ) one time at least shown as in Avoidable Timing 2. RC 15μs ≧ ＜ 15μs ≧ t ≧ RC 15μs ≧ ＜ M24L416256DA t ≧ RC Publication Date: Jul. 2008 Revision: 1.5 10/15 ...
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... Logic HIGH Logic LOW Don’t Care. Ordering Information Speed (ns) Ordering Code 55 M24L416256DA-55BEG 60 M24L416256DA-60BEG 70 M24L416256DA-70BEG 55 M24L416256DA-55TEG 60 M24L416256DA-60TEG 70 M24L416256DA-70TEG 55 M24L416256DA-55BIG 60 M24L416256DA-60BIG 70 M24L416256DA-70BIG 55 M24L416256DA-55TIG 60 M24L416256DA-60TIG 70 M24L416256DA-70TIG Elite Semiconductor Memory Technology Inc. Inputs/Outputs BLE X X High High High Data Out (I/O –I ...
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... ESMT Package Diagram Elite Semiconductor Memory Technology Inc. 48-ball VFBGA ( mm) M24L416256DA Publication Date: Jul. 2008 Revision: 1.5 12/15 ...
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... REF 11.96 0.455 0.463 10.29 0.395 0.400 0.69 0.016 0.023 0.031 REF 0.0315 BSC ° 8 ° 0 M24L416256DA Max 0.047 0.006 0.042 0.018 0.016 0.008 0.006 0.730 0.471 0.4 0.027 ° 8 Publication Date: Jul. 2008 Revision: 1.5 13/15 ...
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... TSOPII package 2008.02.27 2. Add Avoid timing 2008.03.24 Add I-grade for TSOPII package 1. Move Revision History to the last 2008.07.04 2. Modify voltage range 2.7V~3.3V to 2.7V~3.6V 3. Add Industrial grade for BGA package M24L416256DA Description and t HZWE LZWE descriptive and restore t and t HZWE LZWE Publication Date: Jul ...
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... If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications. Elite Semiconductor Memory Technology Inc. Important Notice M24L416256DA Publication Date: Jul. 2008 Revision: 1.5 15/15 ...