m24l416256d Elite Semiconductor Memory Technology Inc., m24l416256d Datasheet - Page 5

• Manufacturer Part Number: m24l416256d
• Description: 4-mbit 256k X 16 Pseudo Static Ram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
AC Test Loads and Waveforms
Switching Characteristics (Over the Operating Range)[10]
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle[13]
t
t
t
t
t
Notes:
10. Test conditions assume signal transition time of 1 V/ns or higher, timing reference levels of V
11. t
12. High-Z and Low-Z parameters are characterized and are not 100% tested.
13. The internal write time of the memory is defined by the overlap of WE ,
14. To achieve 55-ns performance, the read access should be CE controlled. In this case t
Elite Semiconductor Memory Technology Inc.
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
DBE
LZBE
HZBE
SK
WC
SCE
AW
HA
SA
Prameter
[14]
to V
signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input
set-up and hold timing should be referenced to the edge of the signal that terminates write.
satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stable
within 10 ns after the start of the read cycle.
HZOE
CC(typ)
, t
HZCE
, and output loading of the specified I
Parameters
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
12]
12]
Address Skew
Write Cycle Time
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
CE
CE
CE
BLE / BHE LOW to Data Valid
BLE / BHE LOW to Low Z[11, 12]
BLE / BHE HIGH to High-Z[11, 12]
CE
OE LOW to Data Valid
OE LOW to Low Z[11, 12]
OE HIGH to High Z[11, 12]
, t
HZBE
1
1
1
1
R
V
R1
R2
TH
TH
LOW and CE2 HIGH to Data Valid
LOW and CE2 HIGH to Low Z[11,
HIGH and CE2 LOW to High Z[11,
LOW and CE2 HIGH to Write End
and t
HZWE
Description
transitions are measured when the outputs enter a high-impedance state.
OL
/I
OH
and 30-pF load capacitance.
55
Min.
3.0V V
55
45
45
5
5
5
5
0
0
22000
22000
11000
[14]
1.50
–55
CC
Max.
55
55
25
25
25
55
10
0
CE
Min.
60
60
45
45
8
5
5
5
0
0
1
= V
–60
IL
, CE2 = V
Publication Date: Jul. 2008
Max.
Revision: 1.5
ACE
60
60
25
25
25
60
10
5
M24L416256DA
is the critical parameter and t
CC(typ)
IH
, BHE and/or BLE =V
/2, input pulse levels of 0V
Min.
70
10
70
60
55
5
5
5
0
0
Unit
Ω
Ω
Ω
V
–70
Max.
70
70
35
25
25
70
25
10
5/15
IL
Unit
SK
. All
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
is