f25l32pa Elite Semiconductor Memory Technology Inc., f25l32pa Datasheet

f25l32pa

Manufacturer Part Number

f25l32pa

Description

3v Only 32 Mbit Serial Flash Memory With Dual

Manufacturer

Elite Semiconductor Memory Technology Inc.

Datasheet

1.F25L32PA.pdf (36 pages)

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

f25l32pa-100PAG

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NXP

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Download datasheet (373Kb)

ESMT

Flash

The F25L32PA is a 32Megabit, 3V only CMOS Serial Flash

memory device. The device supports the standard and Dual

Serial Peripheral Interface (SPI). ESMT’s memory devices

reliably store memory data even after 100,000 programming and

erase cycles.

The memory array can be organized into 16,384 programmable

pages of 256 byte each. 1 to 256 byte can be programmed at a

time with the Page Program instruction.

The device features sector erase architecture. The memory array

Elite Semiconductor Memory Technology Inc.

FEATURES

ORDERING INFORMATION

GENERAL DESCRIPTION

- Read max frequency: 33MHz

- Fast Read max frequency: 50MHz / 86MHz / 100MHz

- Fast Read Dual max frequency: 50MHz / 86MHz / 100MHz

- Active current: 35 mA

- Standby current: 30 μ A

- Deep Power Down current: 5 μ A

- 100,000 typical program/erase cycles

- 20 years Data Retention

- Byte programming time: 7 μ s (typical)

- Page programming time: 1.5 ms (typical)

Single supply voltage 2.7~3.6V

Standard and Dual SPI

Speed

Low power consumption

Reliability

Program

(100MHz / 172MHz / 200MHz equivalent Dual SPI)

F25L32PA –50PAG

F25L32PA –86PAG

F25L32PA –100PAG

F25L32PA –50PHG

F25L32PA –86PHG

F25L32PA –100PHG

Product ID

100MHz

50MHz

86MHz

50MHz

86MHz

Speed

16 lead SOIC

8 lead SOIC

Package

200mil

300mil

3V Only 32 Mbit Serial Flash Memory with Dual

is divided into 1024 uniform sectors with 4K byte each; 64

uniform blocks with 64K byte each. Sectors can be erased

individually without affecting the data in other sectors. Blocks can

be erased individually without affecting the data in other blocks.

Whole chip erase capabilities provide the flexibility to revise the

data in the device. The device has Sector, Block or Chip Erase

but no page erase.

The sector protect/unprotect feature disables both program and

erase operations in any combination of the sectors of the

memory.

- Chip erase time 25 sec (typical)

- Block erase time 1 sec (typical)

- Sector erase time 90 ms (typical)

- 256 byte per programmable page

- SPI Compatible: Mode 0 and Mode 3

Erase

Page Programming

Lockable 2K bytes OTP security sector

SPI Serial Interface

End of program or erase detection

Write Protect ( WP )

Hold Pin ( HOLD )

All Pb-free products are RoHS-Compliant

Comments

Pb-free

Publication Date: Mar. 2009

Revision: 1.0

F25L32PA

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