m24l416256sa Elite Semiconductor Memory Technology Inc., m24l416256sa Datasheet - Page 4

• Manufacturer Part Number: m24l416256sa
• Description: 4-mbit 256k X 16 Pseudo Static Ram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–55°C to +125°C
Supply Voltage to Ground Potential ................−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[6, 7, 8] .......................................−0.4V to 3.7V
DC Input Voltage[6, 7, 8] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
DC Electrical Characteristics (Over the Operating Range)
V
V
V
V
V
I
I
I
I
I
Thermal Resistance[9]
Parameter
θ
θ
Capacitance[9]
Parameter
C
C
Notes:
6.V
7.V
8.Overshoot and undershoot specifications are characterized and are not 100% tested.
9.Tested initially and after any design or process changes that may affect these parameters.
Elite Semiconductor Memory Technology Inc.
Parameter
IX
OZ
CC
SB1
SB2
CC
OH
OL
IH
IL
IN
OUT
JA
JC
IL(MIN)
IH(Max)
= –0.5V for pulse durations less than 20 ns.
= V
CC
Supply Voltage
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Input Leakage
Current
Output Leakage
Current
V
Supply Current
Automatic CE
Power-down
Current —CMOS
Inputs
Automatic CE
Power-down
Current —CMOS
Inputs
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
+ 0.5V for pulse durations less than 20 ns.
CC
Description
Operating
Description
Input Capacitance
Output Capacitance
Description
I
I
GND ≤ V
GND ≤ V
Disabled
f = f
f = 1 MHz
0.2V, V
and Data Only),f = 0
( OE , WE , BHE and BLE ), V
3.6V
V
f = 0, V
CE ≥ V
CE ≥ V
OH
OL
IN
= 0.1 mA
= −0.1 mA
MAX
≥ V
CC
IN
= 1/t
CC
Test Conditions
CC
CC
= 3.6V
≤ 0.2V, f = f
IN
OUT
− 0.2V or V
RC
− 0.2V, V
− 0.2V,
≤ Vcc
≤ Vcc, Output
V
V
V
I
CMOS level
CC
CC
OUT
CC
Test Conditions
T
V
A
IN
CC
= 2.7V
= 2.7V
MAX
IN
= V
= 0 mA,
= 25°C, f = 1 MHz
= V
≥ V
≤ 0.2V,
(Address
CCmax
CC(typ)
CC
Test
methods and procedures for measuring
thermal impedance, per EIA/JESD51.
CC
,
−
Latch-up Current ....................................................> 200 mA
Operating Range
Range
Extended
Industrial
=
conditions
V
0.8 * V
CC
Test Conditions
Min.
-0.4
2.7
-1
-1
– 0.4
CC
Ambient Temperature (T
−25°C to +85°C
−40°C to +85°C
follow
1 for all speeds
14 for –55
14 for –60
8 for –70
Max.
8
8
Typ.[5]
-55, 60, 70
standard
150
3.0
Publication Date: Jul. 2008
17
Revision: 1.4
M24L416256SA
test
5 for all speeds
Unit
pF
pF
22 for –55
22 for –60
15 for –70
A
V
)
CC
VFBGA
Max.
250
3.6
0.4
0.6
+1
+1
40
+ 0.4
2.7V to 3.6V
2.7V to 3.6V
55
17
V
CC
4/14
Unit
°C/W
°C/W
Unit
mA
µA
µA
µA
µA
V
V
V
V
V