m24lr16e-r STMicroelectronics, m24lr16e-r Datasheet - Page 128

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m24lr16e-r

Manufacturer Part Number
m24lr16e-r
Description
16 Kbit Eeprom With Password Protection, Dual Interface & Energy Harvesting 400 Khz I²c Bus & Iso 15693 Rf Protocol At 13.56 Mhz
Manufacturer
STMicroelectronics
Datasheet

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RF electrical parameters
29
Table 124. RF characteristics
128/143
MI
MI
t
t
RFR
RFR
Symbol
t
H_ISO
I
t
t
V
MIN CD
CARRIER
CARRIER
RFSBL
RFSBL
CC_RF
C
BACK
f
f
f
W
TUN
CC
SH
SL
t
t
, t
, t
1
2
t
RFF
RFF
RF electrical parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device in RF mode.
The parameters in the DC and AC Characteristic tables that follow are derived from tests
performed under the Measurement Conditions summarized in the relevant tables. Designers
should check that the operating conditions in their circuit match the measurement conditions
when relying on the quoted parameters.
External RF signal frequency
Operating field according to ISO
10% carrier modulation index
MI=(A-B)/(A+B)
10% rise and fall time
10% minimum pulse width for bit
100% carrier modulation index
100% rise and fall time
100% minimum pulse width for bit
Minimum time from carrier
generation to first data
Subcarrier frequency high
Subcarrier frequency low
Time for M24LR16E-R response
Time between commands
RF write time (including internal
Verify)
Operating current (Read)
Internal tuning capacitor in SO8
Backscattered level as defined by
ISO test
Parameter
(1) (2)
(5)
(3)
(6)
Doc ID 018932 Rev 7
T
VAC0-VAC1 (4 V peak to peak)
A
150 mA/m > H_ISO > 1000
= -40 °C to 85 °C
H_ISO > 1000 mA/m
MI=(A-B)/(A+B)
From H-field min
f = 13.56 MHz
ISO10373-7
Condition
4224/F
4224/F
F
F
mA/m
CC
CC
/32
/28
S
S
(4)
13.553 13.56 13.567 MHz
150
318.6
24.8
Min
309
0.5
7.1
0.5
15
10
95
10
7
423.75
484.28
320.9
311.5
5.75
27.5
Typ
20
5000
323.3
Max
9.44
9.44
30.2
M24LR16E
100
314
3.0
3.5
30
30
1
mA/
m
Unit
kHz
kHz
mV
ms
ms
µA
pF
µs
µs
µs
µs
µs
µs
%
%

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