fds8936a Fairchild Semiconductor, fds8936a Datasheet

fds8936a

Manufacturer Part Number

fds8936a

Description

Dual N-channel Enhancement Mode Field Effect Transistor

Manufacturer

Fairchild Semiconductor

Datasheet

1.FDS8936A.pdf (4 pages)

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Symbol

THERMAL CHARACTERISTICS

FDS8936A

Dual N-Channel Enhancement Mode Field Effect Transistor

Absolute Maximum Ratings

General Description

DSS

GSS

SO-8 N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance

and provide superior switching performance. These devices

are particularly suited for low voltage applications such as

notebook computer power management

powered circuits where fast switching, low in-line power loss,

and resistance to transients are needed.

STG

SOT-23

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

SO-8

- Pulsed

SuperSOT

pin 1

-6

= 25

and other battery

C unless otherwise noted

SuperSOT

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

(Note 1a)

-8

Features

SO-8

6 A, 30 V. R

High density cell design for extremely low R

High power and current handling capability in a widely

used surface mount package.

Dual MOSFET in surface mount package.

DS(ON)

FDS8936A

-55 to 150

±20

= 0.040

1.6

0.9

= 0.028

SOT-223

@ V

= 4.5 V.

= 10 V,

SOIC-16

May 1998

DS(ON)

FDS8936A Rev.B

Units

°C/W

°C

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fds8936a Summary of contents

Page 1

... unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) May 1998 = 0.028 @ DS(ON 0.040 @ V = 4.5 V. DS(ON) GS DS(ON) SOIC-16 SOT-223 FDS8936A 30 ± 1.6 1 0.9 -55 to 150 78 40 FDS8936A Rev.B . Units °C °C/W °C/W ...

Page 2

... J 0.034 0.004 20 19 650 345 3.2 4.3 1.3 0.7 1.2 (Note 135 C 0.003 C 0.02 in pad of 2oz copper. Units µA µ mV guaranteed FDS8936A Rev.B ...

Page 3

... V 5.5 V 7.0V 10V DRAIN CURRENT ( 125°C 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature 1.2 FDS8936A Rev.B ...

Page 4

... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135° C 25°C A 0.1 0 100 SINGLE PULSE TIME (SEC) Dissipation. R ( 135 °C/W JA P(pk ( Duty Cycle 100 300 Transient FDS8936A Rev.B 30 300 ...

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