fds8936a Fairchild Semiconductor, fds8936a Datasheet - Page 4

• Manufacturer Part Number: fds8936a
• Description: Dual N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
0.05
0.01
0.5
0.1
50
30
10
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
5
2
1
0.1
10
8
6
4
2
0
0
0.005
0.002
0.001
I = 6A
R
SINGLE PULSE
0.05
0.02
0.01
D
0.2
0.5
0.2
0.1
0.0001
JA
T = 25°C
1
A
V
A
GS
= 135 °C/W
D = 0.5
=10V
V
0.5
DS
0.2
5
, DRAIN-SOURCE VOLTAGE (V)
0.1
Q
0.05
1
g
0.02
, GATE CHARGE (nC)
Figure 11. Transient Thermal Response Curve.
0.001
0.01
2
Single Pulse
thermal response will change depending on the circuit board design.
10
Thermal characterization performed using the conditions described in Note 1c.
5
V
DS
10
= 5V
0.01
(continued)
15
20V
30
10V
50
20
0.1
t , TIME (sec)
1
2000
1200
800
400
200
100
30
25
20
15
10
50
5
0
0.01
0.1
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum Power
f = 1 MHz
V
1
GS
0.2
= 0 V
V
0.1
DS
0.5
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Dissipation.
0.5
1
P(pk)
10
1
T - T
R
Duty Cycle, D = t /t
Transient
J
R
JA
2
t
JA
1
A
(t) = r(t) * R
t
= P * R
= 135 °C/W
2
10
R
5
SINGLE PULSE
JA
JA
100
T = 25°C
1
A
(t)
=135° C/W
JA
2
10
C rss
50 100
C iss
C oss
300
FDS8936A Rev.B
30
300