m52s64322a Elite Semiconductor Memory Technology Inc., m52s64322a Datasheet - Page 39
m52s64322a
Manufacturer Part Number
m52s64322a
Description
512k X 32 Bit X 4 Banks Mobile Synchronous Dram
Manufacturer
Elite Semiconductor Memory Technology Inc.
Datasheet
1.M52S64322A.pdf
(47 pages)
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ESMT
Read interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length = Full page
*Note:
Elite Semiconductor Memory Technology Inc.
1. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
2. Burst stop is valid at every burst length.
Both cases are illustrated above timing diagram. See the label 1, 2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycles”.
Publication Date: Aug. 2009
Revision: 1.3
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