s71ws512ne0bfwzz Meet Spansion Inc., s71ws512ne0bfwzz Datasheet - Page 109

• Manufacturer Part Number: s71ws512ne0bfwzz
• Description: Stacked Multi-chip Product Mcp Flash Memoy And Psram Cmos 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory And Pseudo-static Ram
• Manufacturer: Meet Spansion Inc.

DC CHARACTERISTICS
(Under Recommended Operating Conditions unless otherwise noted)
Notes
June 28, 2004 S71WS512NE0BFWZZ_00_A1
Input Leakage Current
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
V
Current
V
Current
V
V
V
DD
DD
DD
DD
DD
Power Down
Standby
Active Current
Page Read Current
Burst Access Current
*1: All voltages are referenced to Vss.
*2: DC Characteristics are measured after following POWER-UP timing.
*3: I
Parameter
OUT
depends on the output load conditions.
Symbol
I
I
P r e l i m i n a r y
I
I
I
I
I
I
I
DDP16
DDP32
I
V
DDPS
DDS1
DDS2
DDA1
DDA2
DDA3
DDA4
V
I
DDS
I
LO
OH
LI
OL
V
V
V
I
V
V
V
CE2 ≤ 0.2V
V
V
CE#1 = CE2 = V
V
V
V
CE#1 = CE2 ≥ V
V
tCK=min.
V
CE#1 = CE2 ≥ V
V
V
V
CE#1 = V
I
V
V
I
V
V
t
I
OL
OUT
OUT
CK
OUT
IN
OUT
DDQ
DD
DDQ
IN
DD
IN
DD
IN
IN
DD
IN
DD
DDQ
IN
DD
IN
DD
IN
= 1mA
= t
= V
(including CLK) ≤ 0.2V or
= V
(including CLK)= V
(including CLK) ≥ V
≤ 0.2V or V
= V
= V
= V
=0mA
=0mA, t
=0mA,
= V
= V
= V
= V
= V
= V
= V
= V
= V
= V
= V
128Mb pSRAM
CK
SS
IH
IH
IH
IH
DD
DD
DD
DD
DD
DD
DD
SS
DDQ
DDQ
DDQ
min., BL = Continuous,
IL
or V
or V
or V
or V
to V
max.,
max., V
max., V
max., V
max.,
max., V
max., V
to V
and CE2= V
PRC
(min), I
Test Conditions
max.,
max.,
IL
IL
DDQ
IL
IL
IN
, CE#1 = V
, CE#1 = V
,
,
DDQ
DDQ
DDQ
= min.
IH
≥ V
DDQ
DDQ
DDQ
DDQ
DDQ
, Output Disable
– 0.2V
– 0.2V
DDQ
OH
IH
DDQ
= V
= V
= V
= V
= V
= –0.5mA
IH
– 0.2V,
or V
,
IL
IL
DDQ
DDQ
DDQ
DDQ
DDQ
– 0.2V,
and CE2= V
and CE2= V
IL
max.,
max.,
max.,
max.,
max.,
,
16M Partial
32M Partial
t
t
RC
minimum
RC
SLEEP
/ t
/ t
1µs
WC
WC
IH
IH
=
=
,
,
Min.
-1.0
-1.0
1.4
—
—
—
—
—
—
—
—
—
—
—
Note *1,*2,*3
Max.
+1.0
+1.0
120
150
300
350
0.4
1.5
10
35
15
30
—
5
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
V
V
109