s71ws512ne0bfwzz Meet Spansion Inc., s71ws512ne0bfwzz Datasheet - Page 18
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s71ws512ne0bfwzz
Manufacturer Part Number
s71ws512ne0bfwzz
Description
Stacked Multi-chip Product Mcp Flash Memoy And Psram Cmos 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory And Pseudo-static Ram
Manufacturer
Meet Spansion Inc.
Datasheet
1.S71WS512NE0BFWZZ.pdf
(142 pages)
- Current page: 18 of 142
- Download datasheet (4Mb)
A d v a n c e
I n f o r m a t i o n
The sector erase architecture allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low V
detector that automat-
CC
ically inhibits write operations during power transitions. The device also offers
two types of data protection at the sector level. When at V
, WP# locks the
IL
four outermost boot sectors at the top of memory and four outermost boot sec-
tors at the bottom of memory.
When the ACC pin = V
, the entire flash memory array is protected.
IL
The device offers two power-saving features. When addresses have been stable
for a specified amount of time, the device enters the automatic sleep mode.
The system can also place the device into the standby mode. Power consump-
tion is greatly reduced in both modes.
Spansion
Flash memory products combine years of Flash memory manufactur-
TM
ing experience to produce the highest levels of quality, reliability and cost
effectiveness. The device electrically erases all bits within a sector simulta-
neously via Fowler-Nordheim tunnelling. The data is programmed using hot
electron injection.
18
S29WSxxxN MirrorBit™ Flash Family For Multi-chip Products (MCP) S71WS512NE0BFWZZ_00_ A1 June 28, 2004
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