fdd6670s Fairchild Semiconductor, fdd6670s Datasheet
fdd6670s
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fdd6670s Summary of contents
Page 1
... The FDD6670S includes DS(ON) an integrated Schottky diode using monolithic SyncFET technology. The performance of the FDD6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode. Applications DC/DC converter Motor Drives G S TO-252 Absolute Maximum Ratings ...
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... A/µs (Note Min Typ Max Units 245 mV/ C 500 A 100 nA –100 –3 2010 pF 526 pF 186 6.2 nC 5.5 nC 0.49 0 19.7 nC FDD6670S Rev E (W) ...
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... A is determined by the user's board design 40°C/W when mounted 1in pad copper D = 25°C and and V = 10V. Package current limitation is 21A DS(on) J(max 96°C/W when mounted minimum pad. FDD6670S Rev E (W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.5V GS 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 6. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.1 0.2 0.3 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD6670S Rev E ( 0.6 ...
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... RSS DRAIN TO SOURCE VOLTAGE ( SINGLE PULSE R = 96°C 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( °C/W JA P(pk ( Duty Cycle 100 1000 FDD6670S Rev E (W) 30 1000 ...
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... Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDD6670S. Time: 10.0ns/div Figure 12. FDD6670S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDD6670A) ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...