fdd6670s Fairchild Semiconductor, fdd6670s Datasheet - Page 6

• Manufacturer Part Number: fdd6670s
• Description: 30v N-channel Powertrench Syncfet
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET.
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows
FDD6670S.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDD6670A).
Figure 12. FDD6670S SyncFET body diode
Figure 13. Non-SyncFET (FDD6670A) body
diode reverse recovery characteristic.
the reverse recovery characteristic of the
reverse recovery characteristic.
Time: 10.0ns/div
Time: 10.0ns/div
(continued)
This diode
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage.
increase the power in the device.
leakage versus drain-source voltage and
0.00001
Figure 14. SyncFET body diode reverse
0.0001
0.001
0.01
0.1
0
temperature.
V
DS
, REVERSE VOLTAGE (V)
10
100
25
o
o
C
C
20
FDD6670S Rev E (W)
This will
30