sss6n90a Fairchild Semiconductor, sss6n90a Datasheet

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sss6n90a

Manufacturer Part Number
sss6n90a
Description
Advanced Power Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
©1999 Fairchild Semiconductor Corporation
Advanced Power MOSFET
FEATURES
Absolute Maximum Ratings
Thermal Resistance
Avalanche Rugged Technology
T
Symbol
Symbol
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ V
Low R
J
dv/dt
R
V
R
V
E
E
I
I
, T
P
I
T
DM
DSS
AR
D
GS
AS
AR
JC
JA
D
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
: 1.829
(Typ.)
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
C
=25 C)
C
C
=25 C)
=100 C)
DS
= 900V
O
O
O
O
O
1
2
1
1
3
Typ.
--
--
- 55 to +150
Value
300
+ _
900
649
BV
R
I
3.5
2.2
3.5
1.5
0.4
24
50
D
TO-220F
1.Gate 2. Drain 3. Source
5
30
SSS6N90A
1
DS(on)
2
DSS
= 3.5 A
3
Max.
62.5
2.5
= 2.3
= 900 V
Units
W/ C
Units
V/ns
C/W
mJ
mJ
W
V
A
A
V
A
C
Rev. B

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sss6n90a Summary of contents

Page 1

... STG Storage Temperature Range Maximum Lead Temp. for Soldering T L Purposes, 1/8 “ from case for 5-seconds Thermal Resistance Symbol Characteristic R Junction-to-Case JC R Junction-to-Ambient JA ©1999 Fairchild Semiconductor Corporation SSS6N90A BV DSS R DS(on 3 TO-220F = 900V 1.Gate 2. Drain 3. Source Value ...

Page 2

... SSS6N90A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... V , Source-Drain Voltage [V] SD Fig 6. Gate Charge vs. Gate-Source Voltage MHz Total Gate Charge [nC] G SSS6N90A @ Notes : 250 s Pulse Test Notes : 250 s Pulse Test ...

Page 4

... SSS6N90A Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 @ Notes : 0.8 -75 -50 - 100 T , Junction Temperature [ J Fig 9. Max. Safe Operating Area 2 Operation in This Area 10 is Limited by R DS(on 100 100 Notes : - 150 Single Pulse -2 10 ...

Page 5

... DUT 10V DUT R 2 Current Sampling ( Resistor out 90 0.5 rated 10 d(on DSS SSS6N90A Charge d(off off BV DSS 1 ---- 2 -------------------- DSS (t) DS Time t p ...

Page 6

... SSS6N90A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Driver ) DUT ) DUT ) + Same Type as DUT • dv/dt controlled by “R • G • I controlled by Duty Factor “D” S Gate Pulse Width -------------------------- Gate Pulse Period ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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