sss6n90a Fairchild Semiconductor, sss6n90a Datasheet - Page 2

• Manufacturer Part Number: sss6n90a
• Description: Advanced Power Mosfet
• Manufacturer: Fairchild Semiconductor

SSS6N90A
Symbol
BV/ T
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes ;
O
O
O
O
O
4
2
3
5
BV
V
R
1
C
t
t
V
I
I
C
C
Q
Q
I
GS(th)
DS(on)
Q
d(on)
d(off)
GSS
DSS
Q
g
I
SM
t
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=100mH, I
I
Pulse Test : Pulse Width = 250
Essentially Independent of Operating Temperature
t
SD
oss
t
S
rr
SD
DSS
iss
rss
fs
r
gs
gd
f
rr
g
< _
J
6A, di/dt
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“ Miller” ) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=3.5A, V
< _
140A/ s, V
Characteristic
Characteristic
DD
=50V, R
DD
< _
BV
G
s, Duty Cycle
=27 , Starting T
DSS
(T
, Starting T
C
=25
O
O
1
4
< _
C
2%
J
Min.
J
Min.
=25 C
900
unless otherwise specified)
2.0
=25 C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
1560
Typ.
1.10
Typ.
3.23
11.5
30.9
7.34
135
580
54
22
40
99
32
68
--
--
--
--
--
--
--
--
--
--
2030
Max. Units
Max. Units
-100
160
210
100
250
2.3
3.5
3.5
1.4
63
55
90
75
89
24
25
--
--
--
--
--
--
--
V/ C
nA
nC
ns
pF
ns
A
V
V
V
A
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
G
DS
=250 A
=6A
F
=25 C ,I
=25 C ,I
/dt=100A/ s
=11.5
=5V,I
=900V
=720V,T
=50V,I
=720V,V
=0V,I
=30V
=-30V
=10V,I
=0V,V
=450V,I
See Fig 13
Test Condition
Test Condition
POWER MOSFET
See Fig 5
N-CHANNEL
D
D
DS
=250 A
=250 A
D
D
S
F
=1.75A
=1.75A
D
=6A
=25V,f =1MHz
=3.5A,V
C
GS
=6A,
See Fig 7
=125 C
=10V,
GS
O
O
4
4
O
O
=0V
4
4
O
O
O
*
5
5
4