IPB80N04S2-H4_08 INFINEON [Infineon Technologies AG], IPB80N04S2-H4_08 Datasheet - Page 2

• Manufacturer Part Number: IPB80N04S2-H4_08
• Description: OptiMOS Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Rev. 1.1
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
R
V
V
I
I
R
DSS
GSS
DS(on)
(BR)DSS
GS(th)
thJC
thJA
thJA
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
SMD version
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
page 2
=V
=40 V, V
=40 V, V
=0 V, I
=20 V, V
=10 V, I
=10 V, I
2
Conditions
cooling area
GS
, I
2)
D
D
= 1 mA
D
D
=250 µA
GS
GS
DS
=80 A
=80 A,
=0 V,
=0 V,
=0 V
3)
IPP80N04S2-H4, IPI80N04S2-H4
min.
2.1
40
-
-
-
-
-
-
-
-
-
Values
0.01
typ.
3.0
3.5
3.2
1
1
-
-
-
-
-
IPB80N04S2-H4
max.
100
100
0.5
4.0
4.0
3.7
62
62
40
1
-
2008-02-22
Unit
K/W
V
µA
nA
mΩ