IPB80N04S2-H4_08 INFINEON [Infineon Technologies AG], IPB80N04S2-H4_08 Datasheet - Page 4

• Manufacturer Part Number: IPB80N04S2-H4_08
• Description: OptiMOS Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Rev. 1.1
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
= f(T
350
300
250
200
150
100
50
0
DS
0
1000
C
); T
100
); V
10
1
p
0.1
C
GS
= 25 °C; D = 0
≥ 6 V
50
1
T
C
100
V
[°C]
DS
[V]
1 ms
10
150
100 µs
10 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
100
10
10
10
= f(t
10
80
60
40
20
0
-1
-2
-3
0
C
10
); V
0
p
-7
0.01
0.05
)
0.1
0.5
GS
10
≥ 10 V
IPP80N04S2-H4, IPI80N04S2-H4
p
-6
/T
single pulse
50
10
-5
10
T
t
-4
C
100
p
[°C]
[s]
10
-3
IPB80N04S2-H4
10
150
-2
10
2008-02-22
-1
200
10
0