PF38F5070M0Y0T0 NUMONYX [Numonyx B.V], PF38F5070M0Y0T0 Datasheet - Page 35

Manufacturer Part Number

PF38F5070M0Y0T0

Description

Numonyx StrataFlash Wireless Memory

Manufacturer

NUMONYX [Numonyx B.V]

Datasheet

1.PF38F5070M0Y0T0.pdf (98 pages)

Numonyx™ StrataFlash

8.4

November 2007

Order Number: 313295-04

When the device is accessed, many internal conditions change. Circuits within the

device enable charge-pumps, and internal logic states change at high speed. All of

these internal activities produce transient signals. Transient current magnitudes depend

on the device outputs’ capacitive and inductive loading. Two-line control and correct

decoupling capacitor selection suppress transient voltage peaks.

Because Intel

VCC, VPP, and VCCQ, each power connection should have a 0.1 µF ceramic capacitor

connected to a corresponding ground connection (e.g.VCCQ to VSSQ). High-frequency,

inherently low-inductance capacitors should be placed as close as possible to package

leads.

Additionally, for every eight devices used in the system, a 4.7 µF electrolytic capacitor

should be placed between power and ground close to the devices. The bulk capacitor is

meant to overcome voltage droop caused by PCB trace inductance.

Automatic Power Saving (APS)

Automatic Power Saving (APS) provides low power operation during a read’s active

state. I

CE# is deasserted. During APS, average current is measured over the same time

interval 5 μs after the following events happen: (1) there is no internal read, program

or erase operations cease; (2) CE# is asserted; (3) the address lines are quiescent and

at V

SSQ

CCAPS

Wireless Memory (L18 AD-Mux)

or V

CCQ

is the average current measured over any 5 ms time interval, 5 μs after

. OE# may also be driven during APS.

Multi-Level Cell (MLC) flash memory devices draw their power from

Datasheet